NAME: LIU Xinyu（doctoral tutor）
EDUCATION: In 2000, obtained Ph.D at IMECAS
RESEARCH INTERESTS: Microwave device Module and integrated circuit
PROJECTS AND TOPICS PARTICIPATED：
1998-2001 As primary principal, participated in the 9th Five year National Key Technologies R&D Program (sub-micron CMOS / SOI device and circuit study) and Key innovative project of CAS (CMOS / SOI 64 KB SRAM Development) and in charge of circuit design and process integration. "Sub-micron CMOS / SOI device and circuit study" has passed national check and was accepted. The CMOS / SOI 64 KB SRAM was developed for the first time in the country.
In 2000, as one of the principals, participated in the Key innovative project of CAS study of 8×10Gb/s photoemission Module for DWDM optical fiber communication.
In 2001, in charge of setting up first 4 inch GaAs production line at home and successfully developed 4 Inch processes for GaAs HBT and HEMT.
In 2002, as the assistant to chief expert, participated in a project of the National Basic Research Program "Study on new generation compound semiconductor device and circuit", carrying out integrated coordination and was in charge of schedule management and financial check and key sub-project" AlGaN / GaN microwave power device ".
In Nov. 2002, as the assistant to the chief scientist, participated in a key innovative project of CAS, successfully developing GaN based power device and InP based UHF device and circuit, part of them reaching the international advanced level.
In 2006, succeeded the chief scientist of 973 project .
In May 2007, as the chief scientist, took charge of the Key innovative project of CAS.
Published more than 60 papers in the National First Grade journals and at domestic and international conferences, owning 16 patents.