The first solar cell prototype (2cm*2cm) of Heterojunction with Intrinsic Thin-layer-Interdigitated back contact (HIT-IBC) in China was developed successfully by the high-efficiency solar cell research group led by the professor JIA Rui in the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS) .

Taking advantage of the advanced equipments for the semiconductor process fabrication, and the ability of developing advanced equipments, the high-efficiency intergitated back contact solar cells (IBCs) has been successfully developed using self-made paste. Based on this, the research group promoted the research proposal of novel HIT-IBC solar cells which combine the advantages of high open circuit voltage (V_oc) from HIT structure and high short circuit current (I_sc) from IBC structure. Therefore, the efficiency of silicon solar cells can be promoted greatly.

The HIT-IBC solar cell in IMECAS, which was fabricated on the N-type 4-inches wafer (different technical scheme was used for P-type wafer), was developed by using both the traditional solar cell technologies, such as screen printing, plasma-enhanced chemical vapour deposited (PECVD) and photolithography, and the advanced fabrication technologies, such as novel passivation technology and heterojunction fabrication process.

The open-circuit voltage of this HIT-IBC solar cell can reach 658mV, because of HIT cell‘s high Open Circuit Voltage, which was obviously higher than the V_oc of conventional silicon solar cells. At the same time, the research group is investigating the HIT-IBC solar cell based on P-type substrate .

Fig. 1 Photograph of the HIT-IBC Battery (Image by IMECAS)

Fig. 2 Sectional Drawing of HIT-IBC Battery (Image by IMECAS)

CONTACT:
Researcher JIA Rui
Institute of Microelectronics of Chinese Academy of Sciences
E-mail: jiarui@ime.ac.cn
Website of Dept.:
http://english.ime.cas.cn/Research/ResearchDivisions/LAB4/