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With the aggressive downscaling of Complementary Metal-Oxide-Semiconductor (CMOS) technology into sub-5 nm nodes, Si-based Field Effect Transistor, the key block of modern Integrated Circuit (IC), is confronted with a serious challenge i.e. tremendously increasing power consumption in a chip consisting of billons of transistors. Transistors of novel architectures, such as multi-gate (e.g. FinFET) or gate-all-around (GAA) devices with high-k/metal gate (HKMG), are able to work properly at...detail...
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