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IMECAS made progress in the field of HfO2 based ferroelectric ... | 2020-03-25
    Recently , the scientific research team led by Academician Liu Ming from the Key Laboratory of the Institute of Microelectronics has made progress in the field of HfO2 based ferroelectric memory .Figure a ) Atomic structure of HZO orthorhombic phase . b ) Cross-section of the 3D vertical structure with Fe-diode devices . c ) Typical I-V curve of the TiN/Hf0.5Z0.5rO2 / TiN/W device . ( d ) Voltage dependence of the SET and RESET operation speed for Fe-diode memory .detail...
IMECAS made progress in the field of HfO2 based ferroelectric memory (2020.03.25)
IMECAS made important progress in the field of brain-like computing (2020.03.25)
IMECAS Developed a New Type of Vertical Gate-All-Around Field-Effect Transistors (2019.12.17)
The Third IEEE Electronic Exploration Camp in IMECAS (2019.07.26)
Int’l Cooperation News
Research Divisions
Breakthrough of IMECAS in Resistive Switching Memory: Breaking the Dilemma of Current and Retenti... (18.10.26)
Tensile-strained germanium on insulator (TSGOI) has been successfully manufactured in IMECAS (18.10.25)
Prof. Weibo Hu Visited IMECAS (17.07.07)
Prof. Hyunsang Hwang Visited IMECAS (17.06.13)
“2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Envir... (17.06.06)
IMECAS and SMIC Cooperate on MEMS R&D and Foundry Platform (16.11.16)
7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD... (16.11.02)
EDACAS holds TCAD Synopsys Technology Seminar (16.10.27)
Prof. J. Joshua Yang Visited IMECAS (16.09.12)
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Research Progress
Innovative progress in the research of GaN interface state in IMECAS
Breakthrough of IMECAS in Resistive Switching Memory: Breaking th...
IMECAS and SMIC Cooperate on MEMS R&D and Foundry Platform
A Significant Breakthrough in Novel GAA SiNW MOSFET at Institute ...
Tensile-strained germanium on insulator (TSGOI) has been successf...
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