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Recently , the scientific research team led by Academician Liu Ming from the Key Laboratory of the Institute of Microelectronics has made progress in the field of HfO2 based ferroelectric memory .Figure a ) Atomic structure of HZO orthorhombic phase . b ) Cross-section of the 3D vertical structure with Fe-diode devices . c ) Typical I-V curve of the TiN/Hf0.5Z0.5rO2 / TiN/W device . （ d ） Voltage dependence of the SET and RESET operation speed for Fe-diode memory .detail...
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