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Events MORE>>
High-temperature Recess for Normally-off Gallium Nitride Transistors
[2015-07-27]
Researchers in China(Institute of Microelectronics of Chinese Academy of Sciences) and Hong Kong(Hong Kong University of Science and Technology) have claimed the highest output power density and power-added ...
Scientists Develop Gate-All-Around Silicon Nanowire Transistors with Channel-Last Process on Bulk Si Substrate
[2015-07-21]
Test result showed that the shape of the fabricated NW channel is more like an irregular diamond with the effective nanowire diameter (DNW) of 12 nm~17 nm. The whole effective channel width (Weff ) is close...
Scientists Develop Novel 14-nm Scallop-Shaped FinFETs on Bulk-Si Substrate
[2015-07-09]
Recently, scientists form Integrated Circuit Advanced Process Center of the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS) developed novel p-type scallop-shaped fin field-effect transi...
Scientists Develop 1200V/15A and 1700V/8A SiC MOSFET Devices
[2015-04-28]
SiC(Silicon Carbide) is the third-generation semiconductor materials. Because SiC has such features as wide band gap, high critical breakdown electric field, high load saturated density of particle flow, it ...
Scientists Develop ZnO Nanowire-Based Black Silicon Solar Cells
[2015-04-15]
Black silicon is a kind of silicon material with low reflection. Comparing with conventional silicon material, black silicon exhibits strong light absorption capability and can be used in solar cells industr...
Research Divisions MORE>>
Silicon device and integration Technology Department(SDIT)
ASIC and System Department
Micro-fabrication and Nano Technology Department
Microwave Devices and Integrated Circuits Department
Communication and multimedia SOC Department
Department of Electronics System Technology
         
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