The Center focuses on the key CMOS technology R&D for the 10 nm and beyond nodes, and building the full intellectual property system of the integrated circuit manufacturing technology, and expanding the More than Moore research field to provide product level R&D service for the enterprise.
♦ The CMOS advanced process technology R&D for the More Moore’ Law that is the key module and process integration technology to continuously shrink the transistor size.
♦ All kinds of Si-based advanced integration technology for the More Than Moore’s Law, including the following five research fields: Si-based MEMS device and process integration technology, Si-based optoelectronics device and process integration technology, Si-based biological chip technology, Si-based power electronics device and process technology and the key technology research of the new type memorizer.
FinFET Transistor Schematic Diagram
The HKMG Structure Using Gate Last Integration Technology
Sour &Drain GeSi Selective Epitaxy Using the Low Temperature Process
The FinFET Structure Beyond 10nm