The laboratory focuses on the basic research in new microelectronic devices and integration technology in new information age, with the aim to provide solutions to the scientific and technological issues in information processing, storage, transmission and energy consumption. The main missions are to establish innovation platforms, to promote the development of frontier science, and to solve the basic scientific problems in IC industry.
♦ Novel memories and the integration technology
♦ Logic devices based on new structures and new materials
♦ Nanofabrication and its application
The Dynamic processes of Conductive Filament Growth and Rupture in Resistive Random Access Memory (RRAM) Observed by in-situ TEM Technique (Adv. Mater., 24, 1844, 2012).
The First Report on the Thermoelectric Effect in RRAM and the Intrinsic Transport Mechanism in Conductive Filament (Nat. Commun.,5, 4598,2014)