Resistance Random Access Memory (RRAM) is a promising candidate for non-volatile memory, with the advantages of simple structure, good scalability, high speed, low power and strong embed ability. In this year, several achievements on reliability study have been obtained on the bases of prior researches on materials, device structure and CMOS integration in the Institute of Microelectronics of Chinese Academy of Sciences(IMECAS). The performance failure model and parameter statistical model were well developed on 1kb RRAM array, as well as a set of approaches for mechanism study, metrology, and simulation. New device structures for ultra low power, self-rectifying, bipolar 1D1R were proposed and verified, which provided a possible solutions for 3D integration. 

The related works supported by National S&T Major Project were published on Advanced Materials、Scientific Reports、Nanoscale、IEEE Electron Device Letters、Applied Physics Letters, etc.  

TEM Image of HfO₂ RRAM Device Integrated on Transistor. (Image by IMECAS)