Home  |  Contact  |  Sitemap  |  中文  |  CAS
About Us
International Cooperation
Education & Training
Societies & Publications
Industrial System
Contact Us
Location: Home > Research > Research Progress

Scientists Discover A Novel TaOx-based Selector with Trapezoidal Band Structure
Author: Dan
Update time: 2016-12-15
Text Size: A A A

The leakage current in the cross array is the main obstacle of the high density integration of memory. In the 1 Transmitting / 1 Receiving (1T1R) structure, transistor is used as a gating tube to isolate the bypass leakage, but the transistor is not suitable for three-dimensional stacking. Therefore, the development of three-dimensional stacking gating device with high uniformity, high selection ratio and high current density is the key to achieve three-dimensional Resistive Random Access Memory (RRAM) integration. It is difficult for the existing gating device to meet the above requirements at the same time.

Aiming to solve this problem, research group at Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) led by academician LIU Ming put forward the idea of using the trapezoidal band structure to construct the gating tube device and develop a high performance gating device, TaOx-based selector with trapezoidal band structure. It is formed by rapid thermal annealing in O2 plasma. It is fully compatible with the Complementary Metal Oxide Semiconductor (CMOS) process and has high uniformity. With the salient features such as high current density (1MA/cm2), high selectivity (5×104), low off-state current (~10 pA), robust endurance (>1010), self- compliance and excellent uniformity, it can provide a good solution to high density 3D Integration of resistance type memory with two ends structure.

The results were published in Nanoscale entitled" Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays". The paper based on this research, Fully BEOL Compatible TaOx-based Selector with High Uniformity and Robust Performance, was received in 62nd International Electron Devices Meeting (IEDM) of Institute of Electrical and Electronics Engineers (IEEE) (December 3-7, 2016. San Francisco). First author o LUO Qing made a report at the meeting.


Figure1: I-V Characteristics of a Selector with High Homogeneity and High Selection Ratio (Image by IMECAS) 


Figure2: I-V Characteristics of RRAM and 1S1R (Image by IMECAS) 


Figure3: Comparison of Performance Parameters of All Kinds of Gating Device (Image by IMECAS) 

IEEE International Electron Devices Meeting (IEDM) was founded in 1954. It is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and Nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.  


Researcher LV Hangbing  

E-mail: lvhangbing@ime.ac.cn  

Website of Dept. 


COPYRIGHT (C) 2007 Microelectronice of Chinese Academy of Sciences. ALL RIGHT RESSRVED