Professor Henry Radamson and Associate Professor Guilei Wang have successfully manufactured tensile-strained germanium on insulator (TSGOI) in Institute of Microelectronics, Chinese Academy of Sciences. The induced strain in Ge can be tuned during the processing and the bandgap of Ge was shifted to 0.7 eV. Due to high quality of Ge layer, high hole mobility of 506cm2V-1s-1 has also been demonstrated. These important results provide a new opportunity for a monolithic solution of electronics and photonics in near future.

Figure：the top view of TSGOI wafer, and its cross-section