Recently, InP HBT Research Team, Microwave Devices and Integrated Circuits Research Department (Dept. Four) of Our Institute successfully developed InP/InGaAs DHBT-based static frequency divider, test results show this frequency divider can be in normal operation at the frequency in excess of 40GHz, when power supply voltage is -5V and power consumption is 650mW. The chip size is 1.2mm×0.6mm. This is the first InP/InGaAs DHBT-based super-high-speed digital circuit capable of operating at millimetre wave band in China.
Static frequency divider is mainly composed of D-FF, the highest operating frequency of static frequency divider can be used to evaluate. Successful development of 40G static frequency divider built laid a better foundation for research of super-high-speed digital circuit and digital-analog circuit in of InP HBT process technology and design. And moreover, the achievement has made a break-through in circuit design, test and modelling, stability of InP HBT processes and consistency of devices. The maximum operating frequency and or DC power consumption are well fit in identical with their simulation. The circuit totally integrates 30 InP-based DHBT, all design and process technology are completed by Institute of Microelectronics, China Academy of Sciences.
The successful development of 40GHz static frequency divider indicates InP HBT Research Team has been in a comparatively mature stage in InP HBT process development and high-speed digital circuit design and laid a solid foundation for forging ahead towards more complicated digital circuits and digital-analog hybrid circuits.

Static frequency divider’s output signal frequency spectrum at 40GHz

Static frequency divider diagram