Recently, “Research on the Key Technologies for Massive Production of 90nm-65nm Very Large Scale Integrated Circuits” that the Institute of Microelectronics had undertaken as one of the partners has been awarded the second prize of National S&T Progress for 2008. Xu Qiuxia, researcher at the Institute of Microelectronics and one of the major contributors to the project, has also been awarded the prize.
“Research on the Key Technologies for Massive Production of 90nm-65nm Very Large Scale Integrated Circuits”, a project under the National 863 Program, was jointly accomplished by six institutions, namely, Beijing University, Semiconductor Manufacturing International Corporation, Zhejiang University, Xidian University, Institute of Microelectronics of Chinese Academy of Sciences, and Tsinghua University. They have successfully developed the core technologies for 90nm VLSI massive production, including micro-processing, cobalt silicide shallow junction, copper interconnection / low-K, device model / OPC model / layout manufacturability, as well as reliability analysis and evaluation technologies, which have been successfully applied in the 12-inch massive production. They have also set up the open platform of key technologies for 90nm CMOS massive production, making China one of the few countries and regions that have got hold of the most advanced manufacturing technologies for massive production of ICs in the world today, and providing a technical platform combing industry, education and research for IC design and manufacturing and R&D of purpose-built device and material technologies. This is of great significance for the development of China’s IC industry. This project was ever awarded the first prize in science and technology from the Ministry of Education in 2007. 
Acting as one of the major contributors to the project, Xu Qiuxia, researcher at the Institute of Microelectronics, successfully accomplished the sub-project “Research on 70nm CMOS Key Technologies and Devices”. On some key technologies for 65nm or below and R&D of new structural devices (such as non-planar bulk silicon CMOS FinFET device structure and its integration technology, groove plane double-gate MOS device structure and its fabrication, and stack gate dielectric / metal gate process and its integration technology), she and her scientific research team have made multiple new achievements, won five invention patents, published sixteen articles on such academic publications as IEEE TED and Journal of Semiconductors, and released six articles at some international conferences.

Certificate of the National S&T Award, PRC
 

Certificate of the National S&T Award, PRC
This is to certify that the National S&T Award has been granted to the following:
Project name: Research on the Key Technologies for Massive Production of 90nm-65nm Very Large Scale Integrated Circuits
Level of award: second prize
Winner: Institute of Microelectronics of Chinese Academy of Sciences

State Council, PRC
December 3, 2008

Certificate No.: 2008-J-219-2-01-D05