The next-generation non-volatile semiconductor memory research group led by Researcher Liu Ming has achieved new progress in the field of Resistive Random Access Memory (ReRAM), the research paper entitled “Improvement of resistive switching properties in ZrO2-based ReRAM with implanted metal ions” was accepted by ESSDER, one of the most important conferences regarding Micro- and Nano-electronics under IEEE, and at the same time, Researcher Liu Ming also was invited as the member of Academic Committee of the Conference, showing research on next-generation non-volatile memory again gained the recognition and acceptance of the same trade in the world.
In ReRAM research, Memory Group of Department 3 concentrated the attention on binary metal oxides, simple in material components, compatible with CMOS in manufacture process, put forward the idea to improve resistive switching characteristics of binary metal oxides by doping and achieved better experimental results. The research shows ReRAM switching characteristics can be controlled artificially by adjusting types of impurities and related parameters of binary oxides thus to provide a technical means for ReRAM practicalization. At the same time, the research group carried out study on Resistive Switching Mechanisms of doped binary oxides and achieved better research results. At present, the research group ha released almost 10 papers in some high-level international periodicals including IEEE Electron Device letters, Applied Physics Letters and Journal of Applied Physics.　　　　
The aforesaid works have obtained supports from National Key Basic Research and Development Plan (973 Program), China High-Tech Research and Development Plan (863 Program) and national natural science funds.