InP HBT Research Team, Microwave Devices and Integrated Circuits Research Department. (Dept. Four) of Our Institute reported a news again, oscillation frequency of InP DHBT designed and developed by them reached 305GHz, breaking the previous record 253GHz made by them. In this field, our institute has obtained an absolute leading advantage in China, and has been approaching international advanced level.
InP-based devices have appealed a lot of research interest both at home and abroad due to its super performance in ultra-high frequency field. But, in China the research is immature, and still have difficulties in devices manufacturing and high-frequency test. With the supports of 973-Project of the Ministry of Science and Technology and important directive projects of the Chinese Academy of Sciences, InP HBT Scientific Research Team headed by Jin Zhi (Researcher), the Scholar “Bai Ren Ji Hua” of the Institute of Microelectronics have overcome tough problems and achieved a great breakthrough in terms of devices frequency, yield and consistency, by adopting such technologies as conventional three-mesa device construction, emitter-base self-aligned and BCB planarization. Performances of common-base four-finger parallel InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) devices successfully developed has gained great optimization, which help to increase breakdown voltage to 7V, saturated Current to 100mA, maximum output power of DC parameter to 80mW, but also make the frequency much more higher, the maximum oscillation frequency has exceeded 305GHz. The result is disclosed in “Solid-State Electronic”, by now the article is the only paper appeared in foreign literature to report devices frequency exceeding 300GHz in the domestic. The successful development of InP DHBT multi-finger parallel topology laid a solid foundation for achievement of PA and VCO in W band. At the project acceptance meeting for 973-Project “Study on New-Generation Compound Semiconductor Electronic Devices and Circuit” just concluded, the result also was well commented by the experts of the field.
Top View of the Device
Device Maximum Oscillation Frequency
