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Preparation of S-doped Black Silicon by LIU Bangwu Recognized by Colleagues
Author: Dept.8 ZHAO Lili,Translate by WANG Fang
Update time: 2010-11-19
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 The paper “Fabrication and Characterization of S-doped Black Silicon” was reputed as one of the best papers in the 7th National Conference on Functional Materials and Applications held in Changsha, capital of Hunan province on October 15-18, 2010.
LIU is a post-doctor at Institute of Microelectronics (IME) under Chinese Academy of Sciences. He initiated research on black silicon in 2009 with the support of his supervisor Prof. XIA Yang.
LIU has prepared multiple black silicons so far with the plasma immersion ion implantation equipment developed by XIA’s group. Despite the equivalent reflective rate of 0.5% under visible light, the black silicons prepared this way have lower cost and higher production efficiency than those prepared by femtosecond laser, thus promising large-scale manufacture for solar cells. LIU was invited to make a report on his research and his paper was widely appreciated at the conference.
Black silicon is a kind of novel semiconductor material, which is more sensitive to light than conventional silicon and could greatly improve the conversion efficiency of solar cells. It enjoys great potential applications in highly-sensitive sensors and photovoltaic cells, and may ensure a promising future for digital photography and night vision device.

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