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The Key Project “The Research on the Fundamentals of GaN Based Millimeter wave Devices and Materials” passes the Development Inspection of NSFC
Author: Dept.4 HOU Jiqiang,Translate by NING Xiaoxi
Update time: 2011-04-28
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In recent times, the Department of Information Sciences at Natural Sciences Foundation of China (NSFC) held a NSF Key Projects midterm inspection conference in Beijing. As a part of the conference, the experts invited by NSFC inspected the Key Project “The Research on the Fundamentals of GaN Based Millimeter wave Devices and Materials” undertaken by the Microwave Devices and Integrated Circuits Department of Institute of Microelectronics at Chinese Academy of Sciences (IMECAS). The principal of the above project, scientist YE Tianchun, who is the leadership of IMECAS, made a statement about the overview status as well as the implementation of the project’s three sub-projects. After the report, experts made inquiries and discussed several crucial problems with participants.
Through the depth and system analysis on the following four fundamental aspects: the innovative structures design, the fabrication and the reliability of the GaN based millimeter wave power device, and the critical techniques in the GaN materials growth, the whole team on time reached all the predicted goals and even acquired a quantity of further achievements. Especially on the aspects of the Materials Growth of High Impedance Buffer Layer, Thin Barrier GaN Heterojunction Structure, Two Dimension Electric Gas Transportation Characteristics of High Electric Field and Fundamentals of Reliability of GaN Devices, the whole team accomplished a bunch of significant progress.
Finally, the experts attended all agree that the team excellently achieves and partially exceeds expected objectives. In the end, the expert panel admits all the efforts made by the team and supports it to continue researching on this topic and propelling the development of related techniques.

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