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IMECAS Achieved Breakthrough in 1700V IGBT Development
Author: Dept.1 IGBT Group,Translate by WANG Fang
Update time: 2011-06-13
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Breakthrough progress has been made in the field of 1700V IGBT (Insulated Gate Bipolar Transistor) by the IGBT group of the Silicon Device and Integration Technology Department in the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS) in May, 2011.
The static characteristics of 1700V trench NPT IGBT developed by IMECAS came up to the basic standards at the first tape out, with the blocking voltage above 1800V and the saturation voltage about 2.8V. Furthermore, the dynamic characteristics are also excellent. The key parameter fall time tf is about 130ns, which is superior to the similar foreign products.
It’s the initiation for researchers from IMECAS into the research on 1700V high voltage IGBT. The design of this kind of IGBT adopts 2 kinds of edge termination structures and 9 kinds of cellular structures, which are all independently developed. Based on the fabricating technology of HHNEC 8-inch line, IMECAS is responsible for the process design, and HHNEC is responsible for the development of individual process modules.
The success of 1700V Trench NPT IGBT indicates the research of IGBT technology reaches a quite new level in IMECAS.

Fig.1 8 inches wafer (Left) and the layout (Right) of 1700V Trench NPT IGBT
(Independent development by IGBT group of IMECAS,Image by IGBT group of IMECAS)

Researcher ZHU Yangjun
Institute of Microelectronics of Chinese Academy of Sciences
E-mail: zhuyangjun@ime.ac.cn


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