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IMECAS Researchers Developed High-Voltage Drive Circuit for Passive-EPD
Author: Dept.11 GAO Zhendong, Translate by WANG Fang
Update time: 2011-10-26
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Supported by the “863 Program" (National High Technology Research and Development Program), the technical team in the Radio Frequency Integrated Circuit Department (Department NO.11) of the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS) successfully developed a kind of multistable high-voltage driver IC,and successfully achieved the drive circuit for Passive –EPD(Electronic Paper Display), which is a solution of drive IC bottleneck for the related domestic display technology.

The Radio Frequency Integrated Circuit Department, cooperating with its partner in “863 Program”, Halation Photonics (Suzhou China), designed multi-voltage drive circuit based on extra-high voltage (90V) CMOS (Complementary Metal Oxide Semiconductor) technology, and had been fabricated successfully at the first tape out in mid-October, 2011. The researchers used positive-negative symmetry high-voltage output design in the extra-high voltage CMOS technology. Comparing with other similar designs under one-sided high voltage, this driver is more simplified in the design of display power source for driving. What’s more, it is the first time in the EPD research field in China to realize extra-high voltage COG (Chip-On-Glass) packetizing drive.

The project team also designed EPD monitor under one-sided high voltage output and the driver chip based on constant-current source. The design has been implemented successfully on one-sided high voltage output. The design based on constant-current source is expected to be used in the applications of OLED (organic light-emitting diode) and LED (light-emitting diode) backlighting.

High-voltage driver chip has the advantages for low electricity consumption and green environmental protection, what’s more, it can improve energy utilization. The successful development of this driver chip lays a solid foundation for the subsequent industrialization. 


Researcher ZHANG Haiying
Institute of Microelectronics of Chinese Academy of Sciences
E-mail: zhanghaiying@ime.ac.cn
Website of Dept.:

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