On June 9 2017, Prof. Hyunsang Hwang from Pohang University of Science and Technology (POSTECH), Korea visited the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS). Prof. Ming Liu hosted the meeting. More than 40 local professionals and graduate students attended the meeting.
Prof. Hyunsang Hwang made a speech on “Analog synapse devices based on interface resistive switching for neuromorphic system”. Using redox reaction at metal/oxide interface, Prof. Hwang developed analog synapse device. Compared with filament switching device which has intrinsic variability of switching parameters, interface resistive switching device exhibits excellent switching uniformity and area scalability. By controlling the reactivity of metal electrode and oxygen concentration in oxide, Prof. Hwang can modulate conductance under potentiation and depression conditions. Prof. Hyunsang Hwang have fabricated wafer-scale high density synapse array device with excellent switching uniformity. By modulating the linearity and symmetry of conductance change, they have estimated the accuracy of pattern recognition of handwritten digits. They found that synapse device with linear and symmetric conductance change exhibits improved pattern recognition accuracy.
After the lecture, a symposium was held with the participating researchers from the IMECAS, both sides introduced their recent works and had a heated discussion.

Prof. Hyunsang Hwang was giving a talk.

Biography

Hyunsang Hwang obtained his Ph.D. degree in Materials Science and Engineering, The University of Texas at Austin in 1992. He has been with Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) since 2012. He has published 330 journal papers and 120 patents on semiconductor device and process. He has presented 28 IEDM/VLSI technology papers since 1990. He has given 40 invited talks and tutorials at international conferences. He is a fellow of The Korean Academy of Science and Technology and Senior Member of IEEE Electron Device Society. He was the IEEE International Electron Device Meeting, Memory Technology Program committee (2009, 2010), IEEE Semiconductor Interface Specialists Conf., Technical Program Committee (2008, 2009, 2010) and International Conf. on Solid State Devices and Materials Program committee (2005-2008, 2011-2016).