NAME: XIE Changqing
Email: xiechangqing@ime.ac.cn
Tel: 0086-10-82995581
Fax:0086-10-62055666
Address: Beitucheng West Road 3, Chaoyang, 100029, Beijing, China,
MEMBERSHIP
Editor of Chinese Journal of Mircro Fabrication.

RESEARCH INTERESTS:　
Advanced nano-lithography ( DUV laser direct-writing, e-beam lithography, x-ray lithography, 193 nm lithography, etc.),
Design, manufacture, test, and application of nano diffractive optical elements.
Prof. Changqing Xie is a senior scientist of Laboratory of Nano-fabrication and Novel Devices Integration Technology, Institute of Microelectronics which pioneered micro/nano fabrication technology. He is a leading expert on nano-fabrication base including MEBES 4700S, JBX5000 LS, and JBX6300 FS e-beam lithograohy systems. Recently his research contributes are BPM/FDTD methods for designing diffractive optical elements, fabrication of a series of dispersive and focusing DOE operating at DUV, VUV, EUV, and x-ray bands, and testing techniques.

RECENT PUBLICATIONS:
(1) Deqiang Wang, Leifeng Cao, Changqing Xie, et al. “Micro Zone Plates with High Aspect Ratio Fabricated by E-Beam and X-ray Lithography,Journal of Microlithography, Microfabrication, and Microsystem”. Vol. 5, 013002 (2006);
(2) Xie Changqing. “Second Generation Proximity X-ray Lithography Technology”. Chinese Journal of Mircro Fabrication, 2006(1):1-6(In Chinese);
(3) Xie Changqing, Niu Jiebin, Wang Deqiang. “Fabrication and Application of SiN/TaSi Based X-ray Lithography Mask”. Chinese Journal of High Energy Physics and Nuclear Physics, 2005,29(S1):140-143 (In Chinese);
(4) Changqing Xie, Dapeng Chen, Ming Liu et al. “Analysis of nanometer isolated trench diffract aerial image of both conventional and second generation synchrotron-based proximity x-ray lithography”，Proceeding of SPIE ,2004, Vol 5645 , 299-306;
(5) Changqing Xie, Dapeng Chen, Jiebing Niu et al.“A new ZEP520/P(MMA-MAA)/ZEP520 tri-layer process for T-shaped gate using synchrotron-based proximity x-ray lithography”. Proceeding of SPIE ,2004, Vol 5645,328-333;
(6) Xie Changqing, Chen Dapeng, Li Bing. “ Design of Beam Line for X-ray Lithography at and beyond 50 nm ”, Nuclear Techniques. 2004,27(5):321-324(In Chinese)