Name:YIN Huaxiang
Gender:Male
Title:Professor
Nationality:China
Education:Ph. D
E-Mail:yinhuaxiang@ime.ac.cn
Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China
Postcode:100029
Tel:86-10-82995831

Education Background:
• Ph.D., Solid Electronics & Microelectronics, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, 2003
• M.S., Solid Electronics & Microelectronics, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, 1999
• B.S., Semiconductor Physics & Device, Tianjin University, Tianjin, China, 1996
Professional Experience
• Aug. 2010 – Present, Professor, Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences
• Jul. 2003 – Jul. 2010, Senior Researcher, Semiconductor Lab, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Corp., Korea
• Sep. 1997 – Jul. 2003, Research Assistant, Silicon Device & Integration Technology Lab, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Research Interests:
Advanced Si MOS device, VLSI process technology and TFT, sensor

Publications:
More than 30 journal papers and over 10 times presentation in international academic conferences.
Main journal papers:
1. Huaxiang Yin, Sunil Kim, Chang Jung Kim, Ihun Song, Jaechul Park, Sangwook Kim, and Youngsoo Park, “Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor's channel layer”, Applied Physics Letters, vol. 93, pp. 172109-172111, 2008
2. Huaxiang Yin, Sunil Kim, Hyuck Lim, Yosep Min, Chang Jung Kim, Ihun Song, Jaechul Park, Sang-Wook Kim, A. Tikhonovsky, Jaewoong Hyun, Youngsoo Park, “Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory”, IEEE Transactions on Electron Devices, vol. 55, No. 8, pp. 2071-2077, Aug. 2008
3. Hyuck Lim, Huaxiang Yin, Jin-Seong Park, Ihun Song, Changjung Kim, JaeChul Park, SunIl Kim, Sang-Wook Kim, Chang Bum Lee, Yong C. Kim, Young Soo Park, and Donghun Kang, “Double gate GaInZnO thin film transistors”, Applied Physics Letters, vol. 93, pp. 063505-063507, 2008
4. Ihun Song, Sunil Kim, Huaxiang Yin, Chang Jung Kim, Jaechul Park, Sangwook Kim, Hyuk Soon Choi, Eunha Lee, Youngsoo Park, “Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory”, IEEE Electron Device Letters, vol. 29, No. 6, pp. 549-552, Jun. 2008
5. Huaxiang Yin, Wenxu Xianyu, A. Tikhonovsky, Young Soo Park, “Scalable 3-D Fin-Like Poly-Si TFT and Its Nonvolatile Memory Application”, IEEE Transactions on Electron Devices, vol. 55, No. 2, pp. 578-584, Feb. 2008
6. Huaxiang Yin, Wenxu Xianyu, Hans Cho, Xiaoxin Zhang, Jisim Jung, Doyoung Kim, Hyuck Lim, Kyungbae Park, Jongman Kim, T. Noguchi, “Advanced poly-Si TFT with fin-like channels by ELA”, IEEE Electron Device Letters, vol. 27, No. 5, pp. 357-359, May 2006
7. 殷华湘, 徐秋霞. 体硅CMOS FinFET结构与特性研究[J]. 电子学报, 2005, 33(8): 1484-1486
8. Hyuck Lim, Huaxiang Yin, Wenxu Xianyu, Jang-Yeon Kwon, Xiaoxin Zhang, Han S. Cho, Jong-Man Kim, Kyung-Bae Park, Do Young Kim, Ji-Sim Jung and Takashi Noguchi, “Ultra-low sheet resistance on poly silicon film by excimer laser activation”, Journal of the Korean Physical Society, vol. 48-I, pp. S47-S50, Jan. 2005
9. 殷华湘, 王云翔, 刘明, 徐秋霞. 电子束曝光UV3正性抗蚀剂的工艺研究[J]. 微电子学, 2003, 33(6): 485-489
10. Yin Huaxiang and Xu Qiuxia, “CMOS FinFET Fabricated on Bulk Silicon Substrate”, Chinese Journal of Semiconductors, vol. 24, No. 4, pp. 351-356, Apr. 2003
11. Yin Huaxiang and Xu Qiuxia, “Structure Design Considerations of a Sub-50nm Self-Aligned Double-Gate MOSFET”, Chinese Journal of Semiconductors, vol. 23, No. 12, pp. 1267-1272, Dec. 2002
12. Qiuxia Xu, He Qian, Huaxiang Yin, Lin Jia, Honghao Ji, Baoqing Chen, Yajiang Zhu, Min Liu, Zhensheng Han, Huanzhang Hu, Yulin Qiu, Dexin Wu, “The investigation of key technologies for sub-0.1-μm CMOS device fabrication”, IEEE Transactions on Electron Devices, vol. 48, No. 7, pp. 1412-1420, Jul. 2001
13. Yin Huaxiang and Xu Qiuxia, “Forming of Very Shallow Junction for S/D Extension in Deep Sub-Micron CMOS Devices”, Chinese Journal of Semiconductors, vol. 21, No. 7, pp. 637-645, Jul. 2000

Main conference presentations:
1. Huaxiang Yin, Sunil Kim, Jaechul Park, Ihun Song, Sang-Wook Kim, Jihyun Hur, Sungho Park, Sanghun Jeon, Chang Jung Kim, “High performance low voltage amorphous oxide TFT Enhancement/Depletion inverter through uni-/bi-layer channel hybrid integration”, in Proceedings of IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, 2009, pp. 199-202
2. Huaxiang Yin, Sunil Kim, Chang Jung Kim, Jae Chul Park, Ihun Song, Sang-Wook Kim, Sung-Hoon Lee, Youngsoo Park, “Bootstrapped ring oscillator with propagation delay time below 1.0 nsec/stage by standard 0.5µm bottom-gate amorphous Ga2O3-In2O3-ZnO TFT technology”, in Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2008, pp. 81-84
3. W. Xianyu, Huaxiang Yin, H.S Cho, Xiaoxin Zhang, T. Noguchi, “New Excimer Laser Annealing Process for Single-Crystal 3-D Stacked Thin-Film Transistors”, in Proceeding International Semiconductor Device Research Symposium (ISDRS), Bethesda, MD, 2005, pp. 82-83
4. Huaxiang Yin, Wenxu Xianyu, Hans Cho, Xiaoxin Zhang, Jisim Jung, Doyoung Kim, Hyuck Lim, Kyungbae Park, Jongman Kim, Jangyeon Kwon, and Takashi Noguchi, “Advanced Poly-Si TFT with Fin-Like Channels”, in Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), Seoul, Korea, 2005, pp. 159-161
5. Huaxiang Yin, Wenxu Xianyu, Jisim Jung, Hans Cho, Doyoung Kim, Kyungbae Park, Jangyeon Kwon, and T. Noguchi, “Investigation of the fin-like TFT structure in LTPS device,” in Proceeding System Information Display (SID), Boston, MA, 2005, vol. XXXVI, pp. 1258–1261
6. Yin Huaxiang, Xu Qiuxia, “Design considerations of the sub-50 nm self-aligned double gate MOSFET with a new channel doping profile”, in Proceedings of 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Shanghai, China, 2001, pp. 535-538

Patents Application:
More than 100 Chinese and International patents (over 30 American patents) under application. Representative items of them are:
1. Huaxiang Yin, Young-soo Park, Sun-il Kim, “Inverted nonvolatile memory device, stack module, and method of fabricating the same”, US Patent 7,994,599 B2
2. Huaxiang Yin, I-hun Song, Chang-jung Kim, Sang-wook Kim, Sun-il Kim, “Inverter, method of manufacturing the same, and logic circuit including the inverter”, US Patent 7,977,978 B2
3. Huaxiang Yin, Takashi Noguchi, Hyuk Lim, Wenxu Xianyu, Hans S. Cho, “Poly-Si thin film transistor and organic light-emitting display having the same”, US Patent 7,999,322 B2
4. Huaxiang Yin, Wenxu Xianyu, Takashi Noguchi, Hans S. Cho, Ji-sim Jung, “Method of manufacturing a thin film transistor”, US Patent 7,611,932 B2
5. Huaxiang Yin, Hyuck Lim, Young-soo Park, Wenxu Xianyu, Hans S. Cho, “Microlens and an image sensor including a microlens”, US Patent 7,750,424 B2
6. Takashi Noguchi, Wenxu Xianyu, Huaxiang Yin, “Organic light emitting display with single crystalline silicon TFT and method of fabricating the same”, US Patent 7416924 B2
7. 徐秋霞, 殷华湘, 钱鹤. “锗预无定形注入结合低能注入形成超浅源漏延伸区的方法”. 专利号: 00135751, 公开日: 2002.07.24, 授权公告日: 2004.01.07
8. 殷华湘, 徐秋霞, “一种鱼脊形场效应晶体管的结构和制备方法”. 专利号: 200410088513.9, 公开日: 2006.05.10, 授权公告日: 2008.06.04
9. 殷华湘，陈大鹏，“半导体器件与制造方法”，申请号201110068069.4