Name:ZHOU Huajie
Gender Male
Nationality:P.R.China
E-Mail:zhouhuajie@ime.ac.cn
Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China
Postcode:100029
Tel:86-10-82995723

Education Background:
He received the B.S. degree in Electronic Engineering from Shandong University, China, in 2001, and the Ph.D degrees in microelectronics from IMECAS, China, in 2009.
Professional Experience
Research Interests
His research interests mainly include nanoscale new structure MOS device fabrication and analysis , and high-K/metal-gate fabrication.

Publications:
1、周华杰，徐秋霞,”Ni全硅化金属栅功函数调节技术研究”,物理学报，2011,第60卷，第10期，108102
2、Y. Song, H. Zhou, Q. Xu, J. Luo, C. Zhao and Q, Liang,”High Performance N- and P-Type Gate-All-Around Nanowire MOSFETs Fabricated on Bulk Si by CMOS-Compatible Process” , 69th Device Research Conference, 20-22 June ，2011，pp.83 – 84
3、Yi Song, Huajie Zhou, Qiuxia Xu, Huajie Zhou, Jiebin Niu, Jiang Yan, Chao Zhao and Huizhong Cai, "High Performance Silicon Nanowire Gate-all-around nMOSFETs Fabricated on Bulk Substrate Using CMOS-compatible Process," IEEE Electron Device Letters, vol. 31, no. 12, 2010, pp. 1377-1379
4、Huajie Zhou, Qiuxia Xu,”Modulate Work Function of Ni-FUSI metal gate by implanting Yb”, 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008，P1272-1275