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XU Gaobo
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Update time: 2011-11-02
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Name:XU Gaobo
Gender:Male
Title:Associate Professor
Nationality:P.R. China
Education:Ph.D
E-Mail:xugaobo@ime.ac.cn
Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China
Postcode:100029
Tel:86-10-82995723

Education Background:
2003.09-2009.07 M.S. & Ph.D. Institute of Microelectronics, Chinese Academy of Science, Beijing, P.R.China
1998.09-2002.07 B.S. School of Information Science and Engineering, Shandong University, Shandong, P.R.China


Professional Experience:
2009.07-Now Institute of Microelectronics, Chinese Academy of Science, Beijing, P.R.China
Research Interests
High k/metal gate technology


Publications:
1. Gaobo Xu, Qiuxia Xu, Thermal stability of HfON, HfSiON and HfTaON gate dielectrics, 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings, 2008, 1284-1287
2. Gaobo Xu, Qiuxia Xu, Characteristics of high-quality HfSiON gate dielectric prepared by physical vapor deposition, Chinese Physics B, 2009, 18 (2): 768-772
3. Gaobo Xu, Qiuxia Xu, Thermal stability of HfTaON films prepared by physical vapor deposition, Journal of Semiconductors, 2009, 30 (2): 023002
4. Gaobo Xu, Qiuxia Xu, Characteristics of HfSiAlON Gate Dielectric Prepared by Physical Vapor Deposition, ECS Transactions, 2011, 34 (1) : 495-501

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