Name:YANG Qinghua
Gender:Male
Title Associate Professor
Nationality:P.R.China
Education:Ph.D.
E-Mail:yangqinghua@ime.ac.cn
Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China
Postcode:100029
Tel:86-010-82995767

Education Background:
1994.09-1999.07,B.S. in Department of Precision Instruments and Mechanology,Tsinghua University,Beijing。
1999.09-2005.06，Ph.D. in Microelectronics and Solid State Electronics, Institute of Microelectronics, Chinese Academy of Sciences.

Professional Experience:
2005.07—present Department of Silicon Devices and Integrated Technology, Institute of Microelectronics Chinese Academy of Science.
During 2009.06-2011.02,Kunshan MicroOptic Electronic Co.Ltd and Hangzhou Branch,COO and CEO.

Research Interests:
Process integration for VLSI circuit,MEMS, Nanofabrication.

Publications:
(1) Zhaohui Chen, Aria Yang,Changqing Xie,Qinghua Yang, C. Vittoria, and V. G. Harris. High-rate reactive ion etching of barium hexaferrite films using optimal CHF3/SF6 gas mixtures，Appl. Phys.Lett.，2009.
(2) Hailong , Che n L a n, Li Zhiga ng , Yang Qinghua, and Ye Tianchun ,OPC Reuse Based on a Reduced Standard Cell Library.2008.Jiao.
(3) ZHAO Min, YANG Qing-hua, LIU Ming, CHEN Bao-qin, Nanoelect ronic Device & Technology,2007.
(4) YANG Qing-hua,LIU Ming,CHEN Da-peng,YE Tian-chun.Gauss Electron Beam Lithography System.Equipment for Electronic Products Manufacturing,2005.
(5) YANG Qing-hua , CHEN Da-peng , YE Tian-chun , LIU Ming ,CHEN Bao-qin , LI Bing , DONG Li-jun,2004. Development of mask for scattering with angular limitation projection electron-beam lithography.

Projects and Subjects Participated :
National Science & Technology Key Project: “Advanced study for key processes and process platform buildup for 22nm node”.