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Update time: 2012-11-12
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Name:ZHAO Miao
Title: Dr.
Nationality: P.R.China
Department:Microwave devices and integrated circuits department
Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China

Education Background:
1. September 2004 ~ July 2007
Ph.D. candidate in Microelectronics and Solid State Electronics National Key Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, China.
2. September 2001 ~ July 2004
M.S. candidate in Material science and engineering, Province Key Laboratory on Material Science and Engineering, Guangxi University, China.
3. September 1997 ~ July 2001
B.S. in Physics, Physics Department, HeBei Normal University, Shijiazhuang, Hebei province, China.

Professional Experience:
July, 2007-Present, working as a researcher in Microwave devices and integrated circuits department, Institute of microelectronics of Chinese academy of sciences, Beijing, China.

Research Interests:
Microwave devices and integrated circuits reliability

[1] Miao Zhao, Liu Xinyu, etal., “Thermal storage of AlGaN/GaN High-Electron-Mobility Transistors”,IEEE transaction on device and material, vol.10,no.3. pp.360-365(2010).
[2] Miao Zhao, Zhou Daibing, Tan Manqing,“Prepareation of Si/SiO2 optical thin film by source electron beam evaporation technology”, Chinese of semiconductors, Vol.27(9):1586-1589(2006)
[3] Miao Zhao,Wang Xinhua,Guo Chunsheng,Liu Xinyu,IEEE 16th International symposium on the Physical&Failure analysis of Integrated Circuited (IPFA 2009) Photo
[4] Miao Zhao, Tan Manqing, “Study of the compact in optical thin film by double electron Beam evaporation technology”, Journal of optoelectronics laser, Vol.18(1):40-42(2007)
[5] Wang Xinhua, Miao Zhao, Liu Xinyu, “The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors”, Chinese Physics B, Vol.19(9):097302(2010)
[6] Wang Xinhua, Miao Zhao, Liu Xinyu, “The experierntial fit of the capacitance-voltage characteristics of the AlGaN/AlN/GaN high electron mobility transistors”, Acta Physica Sinica, Vol.60(4):047101(2010)

Zhaomiao,Liu Xinyu,IEEE 16th International symposium on the Physical&Failure analysis of Integrated Circuited (IPFA 2009) Photo

Patents Application:
1、Miao Zhao, etal., A method to improve the schottky barrier height 200910303939.4, 09.07.02
2、Miao Zhao, etal., A annealing method for Thinning or dicing gallium nitride FET, 200910307846.9,09.09.28
3、Miao Zhao, etal., A method to measure the recessed gate groove depth of the AlGaN/GaN HEMT,200910241685.8,2009.12.02
4、Miao Zhao, etal., A detection method of leakage current of GaN schottky,201010217186.8,2010.7.6
5、Miao Zhao, etal., A test pattern through Schottky monitoring the reliability of the method of a GaN-based HEMT,201010241994.8 2010.8.3
6、Miao Zhao, etal., A GaN-based HEMT reliability assessment method,201010233999.6,2010.7.22
7、Miao Zhao, etal., Determine HEMT aging conditions, aging methods and screening method,201110163890.4,2011.6.17
8、Miao Zhao, etal.,A pre-screening method through aging DC steady-state power for GaN-based HEMT,201110236597.6, 2011.8.17
9、Miao Zhao, etal.,,A method of measuring the thermal reliability of GaN based HEMT, 201110236600.4,2011.8.17
10、Miao Zhao, etal., A method to determine the GaN based heterojunction channel carrier lifetime,201210238641.1,2012.7.10
11、Miao Zhao, etal.,An evaluation for the Schottky current transport mode,201210239703.0,2012.7.10
12、Miao Zhao, etal.,A preparation method for the Dua-channel transisitor,201210335697.9,2012.9.11

Projects and Subjects Participated:
1、 Investigation of the correlation between low frequency noise and reliability in AlGaN/GaN high electronic mobility transistors,National Natural Science Funds,2012.1-2014.12 Project Director
2、 Investigation of the ultrafast process in GaN/AlGaN high-electron-mobility-transistor (HEMT),National Natural Science Funds,2010.1-2012.12

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