Name:ZHAO Miao
Gender:Female
Title: Dr.
Nationality: P.R.China
Education:Doctor
E-Mail:zhaomiao@ime.ac.cn
Department:Microwave devices and integrated circuits department
Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China
Postcode:100029
Tel:86-10-82995595
Fax:86-10-82995595
Education Background:
1. September 2004 ~ July 2007
Ph.D. candidate in Microelectronics and Solid State Electronics National Key Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, China.
2. September 2001 ~ July 2004
M.S. candidate in Material science and engineering, Province Key Laboratory on Material Science and Engineering, Guangxi University, China.
3. September 1997 ~ July 2001
B.S. in Physics, Physics Department, HeBei Normal University, Shijiazhuang, Hebei province, China.
Professional Experience:
July, 2007-Present, working as a researcher in Microwave devices and integrated circuits department, Institute of microelectronics of Chinese academy of sciences, Beijing, China.
Research Interests:
Microwave devices and integrated circuits reliability
Publications:
[1] Miao Zhao, Liu Xinyu, etal., “Thermal storage of AlGaN/GaN High-Electron-Mobility Transistors”，IEEE transaction on device and material, vol.10,no.3. pp.360－365(2010).
[2] Miao Zhao, Zhou Daibing, Tan Manqing,“Prepareation of Si/SiO2 optical thin film by source electron beam evaporation technology”, Chinese of semiconductors, Vol.27（9）：1586-1589(2006)
[3] Miao Zhao,Wang Xinhua，Guo Chunsheng，Liu Xinyu，IEEE 16th International symposium on the Physical&Failure analysis of Integrated Circuited (IPFA 2009) Photo
[4] Miao Zhao, Tan Manqing, “Study of the compact in optical thin film by double electron Beam evaporation technology”, Journal of optoelectronics laser, Vol.18(1):40-42(2007)
[5] Wang Xinhua, Miao Zhao, Liu Xinyu, “The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors”, Chinese Physics B, Vol.19(9):097302(2010)
[6] Wang Xinhua, Miao Zhao, Liu Xinyu, “The experierntial fit of the capacitance-voltage characteristics of the AlGaN/AlN/GaN high electron mobility transistors”, Acta Physica Sinica, Vol.60(4):047101(2010)
Honour:
Zhaomiao，Liu Xinyu，IEEE 16th International symposium on the Physical&Failure analysis of Integrated Circuited (IPFA 2009) Photo
Patents Application:
1、Miao Zhao, etal., A method to improve the schottky barrier height 200910303939.4， 09.07.02
2、Miao Zhao, etal., A annealing method for Thinning or dicing gallium nitride FET, 200910307846.9，09.09.28
3、Miao Zhao, etal., A method to measure the recessed gate groove depth of the AlGaN/GaN HEMT,200910241685.8，2009.12.02
4、Miao Zhao, etal., A detection method of leakage current of GaN schottky，201010217186.8，2010.7.6
5、Miao Zhao, etal., A test pattern through Schottky monitoring the reliability of the method of a GaN-based HEMT，201010241994.8 2010.8.3
6、Miao Zhao, etal., A GaN-based HEMT reliability assessment method，201010233999.6，2010.7.22
7、Miao Zhao, etal., Determine HEMT aging conditions, aging methods and screening method,201110163890.4，2011.6.17
8、Miao Zhao, etal.,A pre-screening method through aging DC steady-state power for GaN-based HEMT，201110236597.6, 2011.8.17
9、Miao Zhao, etal.,，A method of measuring the thermal reliability of GaN based HEMT, 201110236600.4，2011.8.17
10、Miao Zhao, etal., A method to determine the GaN based heterojunction channel carrier lifetime，201210238641.1，2012.7.10
11、Miao Zhao, etal.,An evaluation for the Schottky current transport mode，201210239703.0，2012.7.10
12、Miao Zhao, etal.,A preparation method for the Dua-channel transisitor，201210335697.9，2012.9.11
Projects and Subjects Participated:
1、 Investigation of the correlation between low frequency noise and reliability in AlGaN/GaN high electronic mobility transistors，National Natural Science Funds，2012.1－2014.12 Project Director
2、 Investigation of the ultrafast process in GaN/AlGaN high-electron-mobility-transistor (HEMT),National Natural Science Funds，2010.1－2012.12
