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LUO Weijun
Update time: 2012-11-19
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Name:LUO Weijun
Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China 

Education Background:
1999-2003 Beijing Normal University, Physics, Bachelor
2003-2008 Institute of Semiconductors, Chinese Academy of Sciences,
Microelectronics, Ph.D
Professional Experience:
2008-Present,Institute of Microelectronics, Chinese Academy of Sciences
Research Interests:
Material, Device and Circuits of Compound Semiconductors

[1] W.J. Luo X.J. Chen, L. Pang, T.T. Yuan, X.Y. Liu, “A 24W Ku band GaN based power amplifier with 9.1 dB linear gain”, Microelectronics Journal, 43 (2012) 569–572,pp. 569-572
[2] W. J. Luo, X. J. Chen, C. Y. Yang, Y. K. Zheng, K. Wei, X. Y. Liu, “Stabilization network optimization of internally matched GaN HEMTs”, Microelectronics International, Vol.28 Iss:2, pp. 34-37 (2011)(SCI
[3] Weijun Luo, Xiaojuan Chen, Hui Zhang, Guoguo Liu, Yingkui Zheng, Xinyu Liu, “C-band GaN based linear power amplifier with 55.7% PAE”, Solid-State Electronics 54 (2010) 457–460 (SCI
[4] Weijun Luo, Xiaoliang Wang, Lunchun Guo, et al, “The effect of low temperature AlN interlayer on the growth of GaN epilayer on Si (111) by MOCVD”, Superlattices and Microstructures, 44 (2008) 153–159 (SCI
[5] Weijun Luo, Xiaoliang Wang, Lunchun Guo, et al, “Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si (111) by MOCVD”, Microelectronic Journal, 39 (2008) 1710–1713 (SCI
[6] Weijun Luo, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Junxue Ran, Lunchun Guo, Jianping Li, Hongxin Liu, Jinmin Li, “Growth and Fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD”, Microelectronic Journal, 39 (2008) 1108–1111 (SCI
[7] Luo Weijun, Wei Ke, Chen Xiaojuan, Li Chengzhan, Liu Xinyu, Wang Xiaoliang, “Structure Optimization of Field-Plate AlGaN/GaN HEMTs”, Microelectronic Journal, 38(2007)272-274(SCI
[8] Luo Weijun, Chen Xiaojuan, Liu Guoguo Liu Xinyu, Wang Xiaoyan, Fang Cebao, Guo Lunchun, Wang Xiaoliang, “A Test Circuit with Microstrip Filter for Microwave Power Device”, Chinese Journal of Semiconductor, 2007, Vol.28, p33-36 (EI
[9] Luo Weijun, Chen Xiaojuan, Liang Xiaoxin, Ma Xiaolin, Liu Xinyu, Wang Xiaoliang, “A radial stub test circuit for microwave power device”, Chinese Journal of Semiconductor, 2006, 27, 1557-1561 (EI
[10] 罗卫军,陈晓娟,李诚瞻,刘新宇,和致经,魏珂,梁晓新,王晓亮, “高性能1mm SiC基AlGaN/GaN功率HEMTs研制”,半导体学报,2006,27,104-106 (EI
[11] Weijun Luo, Xiaojuan Chen, Xinyu Liu, “Proton Irradiation effects on AlGaN/GaN HEMTs”, 21st European Conference on Diamond, Diamond- Like Materials, Carbon Nanotubes, and Nitrides,Hungary,2010

Patents Application:
1.A Matching Circuit with Stable Network of High frequency Power Device
Patent Number:200910312949.4
2.A kind of Hybrid Microwave Integrated Circuit
Patent Number:200910312074.8
3.A kind of Stable Network for High frequency Power Device
Patent Number:201010235057.1
4.A Method of Growing GaN on Si substrate
Patent Number:200810057890.4
5.A Metal fabrication Method of Monolithic Microwave Integrated Circuit
Patent Number:200910307518.9

Projects and Subjects Participated:
1.XXX band GaN Power Devices and MMIC
2.Novel liquid sensor based GaN

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