Name:YANG Tao        

Gender:Male

Title:Technical service leader        

Nationality:P.R.China

Education:Ph.D.         

E-Mail: tyang@ime.ac.cn

Department:Integrated Circuit Advanced Process Center

Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China        Postcode        100029

Tel.:+86-10-82995563       

Fax:+86-10-82995783

Education Background:

2003.09-2007.01 Ph. D. in Surface Engineering of Materials, School of Materials; Science and Engineering, Dalian University of Technology

2001.09-2003.07 M. S. in Materials Science, Department of Materials Science and; Engineering, Dalian University of Technology

1997.09-2001.07 B. S. in Materials Engineering, Department of Materials Science and Engineering, Dalian JiaoTong University

Professional Experience:

2007.07-2009.10 Logic Technology Development Center of Semiconductor Manufacture International Corporation（SMIC）

2009.11 to now Integrated Circuit Advanced Process Center, Institute of Microelectronics Chinese Academy of Sciences（IMECAS）

Research Interests:

Advanced IC CMP&WET process development

Publications:

1、 T. Yang, C. Zhao, G. B. Xu, Q. X. Xu, J. F. Li, W. W. Wang, J. Yan, H. L. Zhu, and D. P. Chen, HfSiON High-k Layer Compatibility Study with TetraMethyl Ammonium Hydroxide (TMAH) Solution, Electrochemical and Solid-State Letters, 15 (5) H141-H144 (2012)

2、 T. Yang, H. X. Yin, Q. X. Xu, C. Zhao, J. F. Li, D. P. Chen, Dummy Poly Silicon Gate Removal by Wet Chemical Etching, China Semiconductor Technology International Conference 2011 (CSTIC 2011), ECS Transactions - CSTIC 2011, Dry and Wet Etch and Cleaning, volume 34, pp. 361-364

Honor:

Member of CMPUG in China