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Update time: 2016-11-23
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Name:HUANG Sen






Department:R&D Center of High Frequency & High Voltage Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences

Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China




Education Background:

Bachelor of Electronic Science and Technology, Dalian University of Technology (DUT), Sep. 2000 - Jul. 2004;

PhD of Semiconductor (condensed matter) Physics, Peking University (PKU), Sep. 2004 - Jul. 2009

Professional Experience:

Postdoctoral Research Associate in Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology (HKUST), Aug. 2009 - Aug. 2012;

Associate Professor in R&D Center of High Frequency & High Voltage Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Aug. 2012 – present

Research Interests:

High frequency and high voltage GaN-on-Si power electronic devices and modules; Advanced fabrication, characterization techniques, and device physics in III-V compound semiconductor devices.


1.S. Huang, Q. Jiang, K. Wei, G. Liu, J. Zhang, X. Wang, Y. Zheng, B. Sun, C. Zhao, H. Liu, Z. Jin, X. Liu, H. Wang, S. Liu, Y. Lu, C. Liu, S. Yang, Z. Tang, J. Zhang, Y. Hao, and K. J. Chen, “High-Temperature Low-Damage Gate Recess Technique and Ozone-Assisted ALD-grown Al2O3 Gate Dielectric for High-Performance Normally-Off GaN MIS-HEMTs,” IEEE International Electron Devices Meeting (IEDM-2014), pp. 17.4.1–17.4.4.

2.S. Huang, X. Liu, J. Zhang, K. Wei, G. Liu, X. Wang, Y. Zheng, H. Liu, Z. Jin, C. Zhao, C. Liu, S. Liu, S. Yang, J. Zhang, Y. Hao, and K. J. Chen, “High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique,” IEEE Electron Device Letters, vol. 36, no. 8, pp. 754–756, Aug. 2015.

3.S. Huang, K. Wei, G. Liu, Y. Zheng, X. Wang, L. Pang, X. Kong, X. Liu, Z. Tang, S. Yang, Q. Jiang, and K. J. Chen, “High-fMAX High Johnson’s Figure-of-Merit 0.2-μm Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx passivation,” IEEE Electron Device Letters, vol. 35, no. 3, pp. 315–317, Mar. 2014.

4.S. Huang, Q. M. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs: Compensation of interface trap states by polarization charges,” IEEE Electron Device Letters, vol. 34, no. 2, p. 193, Feb. 2013. (Time cited: 42)

5.S. Huang, Q. M. Jiang, S. Yang, C. H. Zhou, and K. J. Chen, “Effective Passivation of AlGaN/GaN HEMTs by ALD-grown AlN Thin Film,” IEEE Electron Device Letters, vol. 33, no. 4, p. 516, Mar. 2012.

6.S. Huang, S. Yang, J. Roberts, and K. J. Chen, “Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors,” Japanese Journal of Applied Physics. vol. 50, no. 11, p. 110202, Oct. 2011.

7.S. Huang, B. Shen, M. J. Wang, F. J. Xu, Y. Wang, H. Y. Yang, F. Lin, L. Lu, Z. P. Chen, Z. X. Qin, Z. J. Yang, and G. Y. Zhang, “Current transport mechanism of Au/Ni/GaN Schottky diodes at high temperatures,” Applied Physics Letters, vol. 91, no. 7, p. 072109, Aug. 2007.

Patents Application:

1.PASSIVATION OF GROUP III-NITRIDE HETEROJUNCTION DEVICES, Kevin Jing Chen, Sen Huang, Qimeng Jiang, and Zhikai Tang, US No. 8,937,336 B2,授权公告日:2016年5月10日。

2.Low Interface State Device and Method for Manufacturing the Same, Xinyu Liu, Sen Huang, Xinhua Wang, Ke Wei, Wenwu Wang, Junfeng Li, Chao Zhao,申请号:US 14/821,203,专利申请日:2015年8月7日。

3.Low Damage Etching Method for III-nitride, Xinyu Liu, Sen Huang, Xinhua Wang, Ke Wei,申请号:US 15/060,406,专利申请日:2016年3月3日。




7. “III族氮化物低损伤刻蚀方法”,刘新宇,黄森,王鑫华,魏珂,申请号:201510868081.1,专利申请日:2015年12月2日。


9.“增强型GaN基高电子迁移率晶体管及其制备方法”,黄森, 刘新宇, 王鑫华, 魏珂,申请号:201610331114.3,专利申请日:2016年5月18日。

Projects and Subjects Participated:

1.Natural Science Foundation of China,Grant No. 61474138,Reliability and enhancement of GaN-based power switches based on a passivation theory of "Compensation of interface states by polarization charges”,2015/01-2018/12,750,000,project leader.

2.Key Frontier Project of Chinese Acadamy of Sciences, Grant No. QYZDB-SSW-JSC012, GaN-based power devices and interface physics,2016/08-2021/07, 2,500,000, project leader.

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