Name:LV Hangbing         

Gender:Mail

Title:Professor        

Nationality:P.R.China

Education:Ph. D        

E-Mail: lvhangbing@ime.ac.cn

Department:Key Laboratory of Microelectronics Devices and Integrated Technology

Address:NO.3 Bei-tu-cheng West Road, Chaoyang District, Beijing, PR China        

Postcode:100029

Tel:+86-10-82995798        

Fax:+86-10-82995583

Education Background:

2004.9－2009.1 Fudan University Ph. D: Microelectronics

2000.9－2004.7 Shandong University Bachelor：Applied Physics

Professional Experience:

2016.1~Present Professor IMECAS

2012.10~2015.12 Associate Professor IMECAS

2012.3~2012.10 Assistant Professor IMECAS

2010.3~2012.3 Postdoctoral Fellowship IMECAS

Research Interests:

New concept NVM integration and application, Neruomorphic network computing

 Publications:

1)        Qing Luo, Xiaoxin Xu, Hangbing Lv*, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Ling Li, Nianduan Lu, Ming Liu*, Fully BEOL Compatible TaOx-based Selector with High Uniformity and Robust Performance, Tech. Dig.-Int. Electron Devices Meet (IEDM), 2016.

2)        Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv*, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Jianfeng Gao, Nianduan Lu, Ming Liu*, Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays, Nanoscale, 8, 15629, 2016.

3)        Xiaoxin Xu, Qing Luo, Hangbing Lv*, Shibing Long, Qi Liu, Ling Li, Steve S. Chung, Jing Li, and Ming Liu*, Fully CMOS Compatible 3D Vertical RRAM with Self-aligned Self-selective Cell Enabling Sub-5nm Scaling, VLSI Symp. Tech. Dig., 2016, 8.4.

4)        Luo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing*; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Writam Banerjee; Li, Ling; Gao, Jianfeng; Lu, Nianduan; Chung, Steve S.; Li, Jing; Liu, Ming*, Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells, Tech. Dig.-Int. Electron Devices Meet (IEDM), 2015, 10.2.

5)        Luo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing*; Lu, Nianduan; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Writam Banerjee; Li, Ling; Li, Jing; Liu, Ming*, Cu BEOL Compatible Selector with High Selective (>107), Extremely Low Off-current (~pA) and High Endurance (>1010), Tech. Dig.-Int. Electron Devices Meet (IEDM), 2015, 10.4.

6)        Lv, Hangbing; Xu, Xiaoxin Xu; Sun, Pengxiao; Liu, Hongtao; Luo, Qing; Liu, Qi; Banerjee, Writam; Sun, Haitao; Long, Shibing; Li, Ling; Liu, Ming*, Atomic View of Filament Growth in Electrochemical Memristive Elements. Scientific Reports, 5, 13311, 2015.

7)        Lv, Hangbing; Xu, Xiaoxin Xu; Liu, Hongtao; Liu, Ruoyu; Liu, Qi; Banerjee, Writam; Sun, Haitao; Long, Shibing; Li, Ling; Liu, Ming*, Evolution of conductive filament and its impact on the reliability issues in oxide-electrolyte based resistive random access memory, Scientific Reports, 5, 7764, 2015.

8)        Xu, Xiaoxin; Lv, Hangbing*; Li, Yuxiang; Liu, Hongtao; Wang, Ming; Liu, Qi; Long, Shibing; Liu, Ming*, Degradation of Gate Voltage Controlled MLC Storage in 1T1R Electrochemical Metallization Cell, IEEE, Electron Device Letters, 36(6), 555-557, 2015.

9)        Xu, Xiaoxin; Lv, Hangbing*; Liu, Hongtao; Gong, Tiancheng; Wang, Guoming; Zhang, Meiyun; Li, Yang; Liu, Qi; Long, Shibing; Liu, Ming, Superior Retention of Low Resistance State in Conductive Bridge Random Access Memory with Single Filament Formation, IEEE, Electron Device Lett. 36(2), 129-131, 2015.

10)        Liu, Hongtao; Lv, Hangbing*; Yang, Baohe; Xu, Xiaoxin; Liu, Ruoyu; Liu, Qi; Long, Shibing; Liu, Ming, Uniformity Improvement in 1T1R RRAM with Gate Voltage Ramp Programming”, IEEE, Electron Device Lett. 35(12), pp 1224-1226, 2014.

11)        Wang, Ming; Bi, Chong; Li, Ling; Long, Shibing; Liu, Qi; Lv, Hangbing; Lu, Nianduan; Sun, Pengxiao; Liu, Ming*, Thermoelectric Seebeck effect in oxide-based resistive switching memory, Nature Communications, 5, 2014.

12)        Sun, Haitao; Liu, Qi*; Li, Congfei; Long, Shibing; Lv, Hangbing; Bi, Cong; Huo, Zongliang; Li, Ling; Liu, Ming*, Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology, Advanced Functional Materials, 24(36), pp 5679-5687, 2014.

13)        Sun, Haitao; Lv, Hangbing*; Liu, Qi; Long, Shibing; Xie, Hongwei; Liu, Xiaoyu; Yang, Xiaoyi; Niu, Jiebin; Liu, Ming*, Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament, IEEE Electron Device Letters, 34(7), pp 873-875, 2013

14)        Lv, Hangbing; Li, Yingtao; Liu, Qi; Long, Shibing; Li, Ling; Liu, Ming*, Self-Rectifying Resistive-Switching Device With a-Si/WO3 Bilayer, IEEE Electron Device Letters, 34(2), pp 229-231, 2013

15)        Li, Yingtao; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Ming; Xie, Hongwei; Zhang, Kangwei; Huo, Zongliang; Liu, Ming*, Bipolar one diode-one resistor integration for high-density resistive memory applications, Nanoscale, 5(11), pp 4785-4789, 2013.

16)        Wang, Ming; Lv, Hangbing; Liu, Qi; Li, Yingtao; Xu, Zhongguang; Long, Shibing; Xie, Hongwei; Zhang, Kangwei; Liu, Xiaoyu; Sun, Haitao; Yang, Xiaoyi; Liu, Ming*, Investigation of One-Dimensional Thickness Scaling on Cu/HfOx/Pt Resistive Switching Device Performance, IEEE Electron Device Letters, 33(11), pp 1556-1558 , 2012.

17)        Liu, Qi; Sun, Jun; Lv, Hangbing; Long, Shibing; Yin, Kuibo; Wan, Neng; Li, Yingtao; Sun, Litao; Liu, Ming*, Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM, Advanced Materials, 24(14), pp 1844-1849, 2012.

18)        Lv, Hangbing*; Tang, Tingao, Performance improvement of CuxO resistive switching memory by surface modification, Applied Physics A-Materials Science & Processing, 102(4), pp 1015-1018, 2011.

19)        Lian, Wentai; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Wei; Wang, Yan; Li, Yingtao; Zhang, Sen; Dai, Yuehua; Chen, Junning; Liu, Ming*, Improved Resistive Switching Uniformity in Cu/HfO2/Pt Devices by Using Current Sweeping Mode, IEEE Electron Device Letters, 32(8), pp 1053-1055, 2011.

20)        Lv, Hangbing*; Tang, Tingao, The Role of CuAlO Interface Layer for Switching Behavior of Al/CuxO/Cu Memory Device, IEEE Electron Device Letters, 31(12), pp 1464-1466, 2010.

21)        Lv, Hangbing*; Wan, Haijun; Tang, Tingao, Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer, IEEE Electron Device Letters, 31(9), pp 978-980, 2010.

22)        Wang, Yan; Lv, Hangbing; Wang, Wei; Liu, Qi; Long, Shibing; Wang, Qin; Huo, Zongliang; Zhang, Sen; Li, Yingtao; Zuo, Qingyun; Lian, Wentai; Yang, Jianhong; Liu, Ming*, Highly Stable Radiation-Hardened Resistive-Switching Memory, IEEE Electron Device Letters, 31(12), pp 1470-1472, 2010.

23)        Liu, Qi; Long, Shibing; Lv, Hangbing; Wang, Wei; Niu, Jiebin; Huo, Zongliang; Chen, Junning; Liu, Ming*, Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode, ACS Nano, 4(10), pp 6162-6168, 2010.

24)        Lv, Hangbing*; Wang, Ming; Wan, Haijun; Song, Yali; Luo, Wenjing; Zhou, Peng; Tang, Tingao; Lin, Yinyin; Huang, Ryan; Song, Silo; Wu, Jingang; Wu, Hanming; Chi, Minhwa, Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode, Applied Physics Letters, 94(21), 2009.

25)        Lv, HB; Yin, M; Fu, XF; Song, YL; Tang, L; Zhou, P; Zhao, CH; Tang, TA; Chen, BA; Lin, YY; Resistive Memory Switching of Films for a Nonvolatile Memory Application, Electron Device Letters, IEEE, 29, 309-311, 2008

26)        Lv, HB; Yin, M; Song, YL; Fu, XF; Tang, L; Zhou, P; Zhao, CH; Tang, TA; Chen, BA; Lin, YY; Forming process investigation of CuxO memory films, Electron Device Letters, IEEE, 29, 47-49, 2008.

Honour:

1.        Young Scientists Fund of MOST of China

2.        Excellent Young Scientists Fund of National Natural Science Foundation of China (NSFC)

3.        Lu Jiaxi Young Talent Award

4.        The Youth Innovation Promotion Association CAS

5.        IEEE ETDM TPC member

Patents Application:

1.        Lv, Hangbing，et al.，Metal oxide resistive switching memory and method for manufacturing same ，US，8,735,245.

2.        Lv, Hangbing, et al.，A Resistive switching memory with self-rectifying characteristics and fabrication methods therefore，ZL201210311109.8.

3.        Lv, Hangbing, et al.，A CMOS compatible metal oxide resistive switching memory and fabrication methods therefore, ZL201110066086.4.

4.        Lv, Hangbing, et al.，A CMOS compatible resistive switching memory and fabrication methods therefore, ZL201110066088.3.

5.        Lv, Hangbing, et al.，A fabrication method of resistive switching memory，ZL201210311116.8.

Projects and Subjects Participated:

1.        Young Scientists Fund of MOST of China, “Nanoscale effect of resistive switching memory towards 3D integration”, 2016YFA0203800, 2016.7-2021.6.

2.        Excellent Young Scientists Fund of National Natural Science Foundation of China (NSFC), “Integration and reliability of resistive switching memory”, 61522408, 2016.1-2018.12

3.        Fund of National Natural Science Foundation of China (NSFC), “Investigation of non-volatile DRAM”, 61376112, 2014.1-2017.12.