Name:SUN Bing
Gender:Male
Nationality:P. R. China
Education:Ph.D
E-Mail: sunbing@ime.ac.cn
Department:High-Frequency High-Voltage Device and Integrated Circuits R&D Center
Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China
Postcode:100029
Tel:+86-10-82995593
Fax:+86-10-62021601
Education Background:
09/2005-07/2010, Institute of Microelectronics, Peking University, Ph.D 09/2001-07/2005, Department of Physics, Nanjing University, B. S.
Professional Experience:
12/2014-present, Institute of Microelectronics of Chinese Academy of Science, Associate Professor.
07/2010-11/2014, Institute of Microelectronics of Chinese Academy of Science, Assistant Professor.
Research Interests
High Mobility CMOS Technology and Devices.
Publications:
1. B. Sun, H. D. Chang, S. K. Wang, P. Ding, J. B. Niu, Z. J. Gong, H.-G Liu, “100-nm Gate-Length GaAs mHEMTs Using Si-doped InP/InAlAs Schottky Layers and Atomic Layer Deposition Al2O3 Passivation with fmax of 388.2 GHz”, The 7th IEEE International Nanoelectronics Conference (INEC2016), T9-5, May 9-11, 2016, Chengdu, China.
2. B. Sun, Z. H. Zeng, H. D. Chang, Q. L. Sun, S. K. Wang, W. X. Wang, H. -G. Liu, “InGaSb Buried-Channel pMOSFET Fabricated by Using Digital Etch Technique”, Extend Abstract of International Conference on Solid State Devices and Materials (SSDM2014), p.124, 2014, Tsukuba, Japan.
3. B. Sun, W. Zhao, S. Y. Li, H. D. Chang, S. K. Wang, J. Q. Pan, H. -G. Liu, “The effect of in-situ ozone annealing per cycle on Al2O3 gate dielectric deposited by atomic layer deposition using TMA and H2O for InGaAs MOS capacitor”, The 12th International Conference on Solid State and Integrated Circuit Technology (ICSICT-2014), Oct. 28- 31, 2014, Guilin, China.
4. B. Sun, H. D Chang, L. Lu, H. -G. Liu, D. X. Wu, “High-Quality Single Crystalline Ge (111) Growth on Si (111) Substrates by Solid Phase Epitaxy”, Chin. Phys. Lett. Vol. 29, No. 3 (2012)036102.
5. B. Sun, L. S. Wu, H. D. Chang, W. Zhao, B. Q. Xue, H. -G. Liu, “Source/Drain Ohmic Contact Optimization for GaSb pMOSFETs”, The 11th International Conference on Solid State and Integrated Circuit Technolog (ICSICT-2012), Xi’ An, Oct. 29 - Nov. 1, 2012.
Projects and Subjects Participated
1. The National Natural Science Foundation of China under Grant No. 61106095.
2. The National key research and development program Grant No. 2016YFA0201903.
3. The National Basic Research Program of China under Grant No. 2010CB327501.
4. The National Basic Research Program of China under Grant No. 2011CBA00605.
5. The National Science & Technology Major Project under Grant No. 2011ZX02708-003.
