Home  |  Contact  |  Sitemap  |  中文  |  CAS
About Us
International Cooperation
Education & Training
Societies & Publications
Industrial System
Contact Us
Location: Home > People > Faculty and Staff

WU Zhenhua
Update time: 2017-04-06
Text Size: A A A

Name:WU Zhenhua






Department:Integrated Circuit Advanced Process Center

Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China



Education Background:

2006/09-2011/07, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, Ph.D., Condensed Matter Physics.

2009/02-2009/05, HongKong City University, HongKong, China, Research Assistant.

2002/09-2006/06, Nanjing University, Nanjing, China B.S., Microelectronics.

Professional Experience:

2016/06-Present, Professor, Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences.

2013/03-2016/05, Senior Engineer, Semiconductor Research Center, Samsung Electronics, Korea.

2011/09-2013/03, Engineer, Semiconductor Research Center, Samsung Electronics, Korea.

Research Interests:

FinFET, CMOS technology, 2D materials and device technology. Nano device with quantum effect.


Journal Papers:

(1)        Zhang, Rui; Wu, Zhenhua*; Li, X. J.; Chang, Kai*, Aharonov-Bohm effect in monolayer phosphorene nanorings, Physical Review B, 2017, 95(12), 125418.

(2)        Bhuwalka, Krishna K.*; Wu, Zhenhua*; Noh, Hyeon-Kyun; Lee, Wonsok; Cantoro, Mirco; Heo, Yeon-Cheol; Jin, Seonghoon; Choi, Woosung; Kwon, Uihui; Maeda, Shigenobu; Lee, Keun-Ho; Park, Young-Kwan, In0.53Ga0.47As-Based nMOSFET Design for Low Standby Power Applications, IEEE Transactions on Electron Devices, 2015, 62(9), 2816.

(3)        Tan, P. H.; Han, W. P.; Zhao, W. J.; Wu, Z. H.; Chang, K.; Wang, H.; Wang, Y. F.; Bonini, N.; Marzari, N.; Pugno, N.; Savini, G.; Lombardo, A.; Ferrari, A. C., The shear mode of multilayer graphene, Nature Materials, 2012, 11(4), 294.

(4)        Wu, Zhenhua; Li, J.; Chan, K. S., Charge pumping in monolayer graphene driven by a series of time-periodic potentials, Physics Letters A, 2012, 376(12-13), 1159.

(5)        Wu, Zhenhua; Li, J., Spin-related tunneling through a nanostructured electric-magnetic barrier on the surface of a topological insulator, Nanoscale Research Letters, 2012 7(1), 90.

(6)        Wu, Zhenhua; Zhai, F.; Peeters, F. M.; Xu, H. Q.; Chang, Kai, Valley-Dependent Brewster Angles and Goos-Hanchen Effect in Strained Graphene, Physical Review Letters, 2011, 106(17), 176802.

(7)        Wu, Zhenhua; Peeters, F. M.; Chang, Kai, Spin and momentum filtering of electrons on the surface of a topological insulator, Applied Physics Letters, 2011, 98(16), 162101.

(8)        Wu, Zhenhua, Electronic fiber in graphene, Applied Physics Letters, 2011, 98(8), 082117.

(9)        Wu, Zhenhua; Peeters, F. M.; Chang, Kai, Electron tunneling through double magnetic barriers on the surface of a topological insulator, Physical Review B, 2010, 82(11), 115211.

(10)        Wu, Zhenhua; Zhang, Z. Z.; Chang, Kai; Peeters, F. M., Quantum tunneling through graphene nanorings, Nanotechnology, 2010, 21(18), 185201.

(11)        Zhang, Z. Z.; Wu, Z. H.; Chang, Kai; Peeters, F. M., Resonant tunneling through S- and U-shaped graphene nanoribbons, Nanotechnology, 2009, 20(41), 415203.

(12)        Wu, Zhenhua; Chang, Kai; Liu, J. T.; Li, X. J.; Chan, K. S., The Hartman effect in graphene, Journal of Applied Physics, 2009, 105(4), 043702.

Conference Paper:

(1)        Qingzhu Zhang; H. Yin; J. Luo; H. Yang; L. Meng; Y. Li; Zhenhua Wu; Y. B. Zhang; Y. K. Zhang; C. Qin; J. Li; J. Gao; G. Wang; W. Xiong; J. Xiang; Z. Zhou; S. Mao; G. Xu; J. Liu; T. Yang; J. F. Li; Q. Xu; J. Yan; H. Zhu; C. Zhao; T. Ye, FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin, Electron Devices Meeting (IEDM), 2016 IEEE International, 2016/12/3-2016/12/7, pp 17.3.1-17.3.4, San Francisco, United States, 2016.

(2)        S. Dhar; H. Noh; S. Kim; H. Kim; Zhenhua Wu; W. Lee; K. Bhuwalka; J. Kim; C. Jeong; U. Kwon; S. Maeda; K. Lee, Impact of BTBT, stress and interface charge on optimum Ge in SiGe pMOS for low power applications, Simulation of Semiconductor Processes and Devices (SISPAD), 2016 International Conference, 2016/9/6-2016/9/8, pp 345-348, Nuremberg, Germany, 2016.

(3)        Hur, Sung-Gi; Yang, Jung-Gil; Kim, Sang-Su; Lee, Dong-Kyu; An, Taehyun; Nam, Kab-Jin; Kim, Seong-Je; Wu, Zhenhua; Lee, Wonsok; Kwon, Uihui; Lee, Keun-Ho; Park, Youngkwan; Yang, Wouns; Choi, Jungdal; Kang, Ho-Kyu; Jung, Eunsung, A practical Si nanowire technology with nanowire-on-insulator structure for beyond 10nm logic technologies, Electron Devices Meeting (IEDM), 2013 IEEE International, 2013/12/9-2013/12/11, pp 26.5.1-26.5.4, Washington, DC, United States, 2013.

Patents Application:

(1)K. Bhuwalka; Zhenhua Wu; U. Kwon; K. Lee, Semiconductor devices having tapered active regions, 2016/2/18, US 15/046,455.

(2)M. Cantoro; Zhenhua Wu; K. Bhuwalka; S. Kim; S. Maeda, Semiconductor devices including field effect transistors and methods of forming the same, 2015/8/11, 14/823,229.

COPYRIGHT (C) 2007 Microelectronice of Chinese Academy of Sciences. ALL RIGHT RESSRVED