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Advanced technology node Simulation DTCO,
1. Luo, Y.; Zhang, Q.; Cao, L.; Gan, W.; Xu, H.; Cao, Y.; Gu, J.; Xu, R.; Yan, G.; Huo, J.;Wu, Zhenhua*, Yin, H.*, Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node from Device to Circuit,IEEE Transactions on Electron Devices, 2022, in press, doi:10.1109/TED.2022.3176843. [通讯作者]
2. Huang, S.#;Wu, Zhenhua#; Xu, H.; Guo, J.; Xu, L.; Duan, X.; Chen, Q.; Yang, G.; Zhang, Q.; Yin, H.; Wang, L.*; Li, L.*; Liu, Ming, Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6nm-Thick Silicon Nanosheet GAA-FETs, 2021,International Electron Devices Meeting(IEDM). [共同一作]
3. Zhao. Y.; Wang, L.;Wu, Zhenhua, Schanovsky, F.; Xu, X.; Yang, H.; Yu, H.; Lai, J.; Liu, D.; Chuai, X.; Su, Y.; Wang, X.; Li, L.*; Liu, Ming*, A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes, 2021,Symposium on VLSI Technology(VLSI). [第三作者]．
4. Yao, J.; Li, J.; Luo, K.; Yu, J.; Zhang, Q.; Hou, Z.; Gu, J.; Yang, W.;Wu Zhenhua*; Yin, H.; Wang, W.,Physical Insights on Quantum Confinement and Carrier Mobility in Si,Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node.J. Elec. Dev. Soc., 2018 6, 841. [通讯作者]
Beyond Moore materials, Devices path-finding
5. Gan, W.; Prentki, R.; Liu, F.; Bu, J.; Luo, K.; Zhang, Q.; Zhu, H.; Wang, W.; Ye, T.; Yin, H.;Wu, Zhenhua*; Guo Hong*, Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model,IEEE Transactions on Electron Devices, 2020, 67(6), 2243. [通讯作者]
6. Zhou, M.; Zhou, C.; Luo, K.; Li, W.; Liu, J.*; Liu, Z.;Wu, Zhenhua*, Ultrawide bandwidth and sensitive electro-optic modulator based on a graphene nanoelectromechanical system with superlubricity, Carbon, 2021, 176: 228. [通讯作者]
7. Xia, Y.; Guo, S.; Xu, L.; Guo, T.;Wu, Zhenhua*; Zhang, S.*; Sensing Performance of SO2, SO3 and NO2 Gas Molecules on 2D Pentagonal PdSe2: A First-principle Study,IEEE Electron Device Letters, 2021, 42: 573. [通讯作者]
8.Wu, Zhenhua; Zhai, F.; Peeters, F. M.; Xu, H. Q.; Chang, Kai*, Valley-Dependent Brewster Angles and Goos-Hanchen Effect in Strained Graphene,Physical Review Letters, 2011, 106(17), 176802. [第一作者]
Machine Learning in TCAD.
9. Xu, H.; Gan, W.; Cao, L.; Yang, C.; Wu, J.; Zhou, M.; Qu, H., Zhang, S.*; Yin, H.;Wu, Zhenhua*,A Machine Learning Approach for Optimization of Channel Geometry and Source/Drain Doping Profile of Stacked Nanosheet Transistors,IEEE Transactions on Electron Devices, 2022, in press, doi: 10.1109/TED.2022.3175708. [通讯作者]
10. Yang, Q.; Qi, G.; Gan, W.;Wu, Zhenhua*, Yin, H.; Chen, T.; Hu, G.; Wan, J.; Yu, S.; Lu, Y.*, Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs,IEEE Transactions on Electron Devices, 2021, 68(9): 4181. [通讯作者]
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