Name

Xinhua Wang

Gender

male

Title

Associate Professor

Nationality

P.R.China

Education

Doctor

E-Mail

Wangxinhua@ime.ac.cn

Department

High-Frequency High-Voltage Device and Integrated Circuits Center

Address

3 Beitucheng West Road, Chaoyang District, Beijing, PR China

Postcode

100029

Tel

+86-10-82995681

Fax

Education Background

2003.09-2007.06 Nanjing University of Science and Technology, Bachelor

2007.09-2012.06 Graduate School of Chinese Academy of Sciences, Doctor

Professional Experience

2012.07-2017.04 HF & HV Center of IMECAS, assistant professor, Youth League committee member of IMECAS

2017.04-   HF & HV Center of IMECAS, associate professor, Member of Youth League committee of IMECAS

   From 2017.05, deputy secretary of Youth League committee of IMECAS;

   From 2018.12, deputy director of HF & HV Center of IMECAS;

From 2021.10, director of HF & HV Center of IMECAS;

Publications

[1] Xinhua Wang, et al. Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing. ACS Appl. Mater. Interfaces, vol. 13, no. 6, pp. 7725–7734, 2021.

[2] Kexin Deng, Xinhua Wang^*, et al. Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiNx/III-nitride heterostructures. Applied Surface Science, vol. 542, p. 148530, 2021.

[3] Xinyu Liu+, Xinhua Wang+,*, et al. “Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition,” ACS Appl. Mater. Interfaces，10(25), pp. 21721–21729 , 2018.

[4] Xinhua Wang, et al. Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer. IEEE Electron Device Letter, 36(7), p.666, 2015

[5] Wang Xinhua, et al. Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer. IEEE Transaction on Electron Device. 2014, 61(5),p. 1341

Research Interests  

III-Nitride based microwave and power electronic device

Compound semiconductor interface physics and heterogeneous integration