Name:DING Wuchang        
Gender:Male
Title:Associate professor        
Nationality:P.R.China
Education:Ph.D        
E-Mail:dingwuchang@ime.ac.cn
Department:        
Address        3 Beitucheng West Road, Chaoyang District, Beijing, PR China        
Postcode:100029
Tel:+86-10-82995597

        
Education Background:
2000-2004, University of Science and Technology of China, Bachelor;
2004-2009, Institute of Semiconductors, Chinese Academy of Sciences, Ph.D.
Professional Experience:
2009-, Institute of Microelectronics, Chinese Academy of Sciences.
Research Interests:
High frequency devices and integrated circuits based on InP materials, such as InP HBT and HEMT device fabrication and modeling.
Publications:
1.        Ding Peng, Chen Chen, Ding Wuchang, et al. “Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance”, SOLID-STATE ELECTRONICS, vol. 123, pp. 1-5, 2016;
2.        Ding Wuchang, Jia Rui, Li Haofeng et al. “Design of two dimensional silicon nanowire arrays for antireflection and light trapping in silicon solar cells”, JOURNAL OF APPLIED PHYSICS, Vol. 115, pp. 014307, 2014;
3.        Ding Wuchang, Jia Rui, Wu Deqi, et al. “Numerical simulation and modeling of spectral conversion by silicon nanocrystals with multiple exciton generation”, JOURNAL OF APPLIED PHYSICS, vol. 109, pp.054312, 2011;
4.        Ding Wuchang, Jia Rui, Cui Dongmeng, et al. “Light confinement for silicon solar cells with thin substrate”, 39th IEEE Photovoltaic Specialists Conference, pp.2633-2636, 2013;
5.        Ding Wuchang, Wang Qiming, et al. “A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions”, CHINESE PHYSICS B, vol.18, pp. 3044-3048;
6.        丁武昌，“光管理在晶体硅电池中的应用”，中国光学，vol.6, pp.717-728;