Name:XIANG Jinjuan
Gender:Female
Title:Associate Researcher
Nationality:P.R.China
Education:Ph. D.
E-Mail:xiangjinjuan@ime.ac.cn
Department:Integrated Circuit Advanced Process R&D Center
Address:No. 3 Beitucheng West Road, Chaoyang District, Beijing, PR China
Postcode:100029
Tel:+86-10-82995563
Education Background:
2000.09-2004.7 Harbin University of Science and Technology, Bachelor
2004.09-2007.04 Harbin University of Science and Technology, Master
2013.09-2016.07 University of Chinese Academy of Sciences, Ph.D.
Professional Experience:
2007.04-2009.6 SKY Technology Development.
2009.8- Institute of Microelectronics of Chinese Academy of Sciences
Research Interests:
Study of ALD technology
Publications:
1. Jinjuan Xiang, Xiaolei Wang, Tingting Li, Jianfeng Gao, Kai Han, Jiahan Yu, Wenwu Wang, Junfeng Li, and Chao Zhao, “Investigation of Thermal Atomic Layer Deposited TaAlC with Low EffectiveWork-Function on HfO2 Dielectric Using TaCl5 and TEA as Precursors”, ECS Journal of Solid State Science and Technology, 6 (1) P38-P41 (2017).
2. Jinjuan Xiang, Tingting Li, Xiaolei Wang, Liyong Du, Yuqiang Ding, Wenwu Wang, Junfeng Li, Chao Zhao, “Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors”, ECS Journal of Solid State Science and Technology, 5 (10) P633-P636 (2016).
3. Jinjuan Xiang, Yanbo Zhang, Tingting Li, Xiaolei Wang, Jianfeng Gao, Huaxiang Yin, Junfeng Li, Wenwu Wang, Yuqiang Ding, Chongying Xu, Chao Zhao, “Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate”, Solid-State Electronics,122 P64-69 (2016).
4. Jinjuan Xiang, Tingting Li, Xiaolei Wang, Kai Han, Junfeng Li, Chao Zhao, “Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks”, ECS Journal of Solid State Science and Technology, 5 (6) P327-P329 (2016).
5. Jinjuan Xiang, Yuqiang Ding, Liyong Du, Chongying Xu, Tingting Li, Xiaolei Wang, Junfeng Li, Chao Zhao, “Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors”, ECS Journal of Solid State Science and Technology, 5 (5) P299-P303 (2016).
6. Jinjuan Xiang, Yuqiang Ding, Liyong Du, Junfeng Li, Wenwu Wang, Chao Zhao, "Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors” Chin. Phys. B, 25(3) 037308 (2016).
7. Jinjuan Xiang, Tingting Li, Yanbo Zhang, Xiaolei Wang, Jianfeng Gao, Hushan Cui, Huaxiang Yin, Junfeng Li, Wenwu Wang, Yuqiang Ding, Chongying Xu, Chao Zhao, "Investigation of TiAlC by Atomic Layer Deposition as N Type Work Function Metal for FinFET," ECS Journal of Solid State Science and Technology, 4 (12) P441-P444 (2015)
8. Jinjuan Xiang, Guilei Wang, Tingting Li, Hushan Cui, Xiaolei Wang, Gaobo Xu, Junfeng Li, Wenwu Wang, and Chao Zhao, ”Effect of Precursor Entrance Sequence during Atomic Layer Deposition on the Al2O3/Ge Interface by X-ray Photoelectron Spectroscopy”, ECS Transactions, 58 (7) 153-158 (2013).
9. Jinjuan Xiang, Xiaolei Wang, Tingting Li, Chao Zhao, Wenwu Wang, Junfeng Li, Qingqing Liang, Dapeng Chen and Tianchun Ye, “Band Lineup Issues Related with High-k/SiO2/Si Stack”, ECS Transactions, 50 (4) 293-298 (2012) ..
10. Jinjuan Xiang, Yuqiang Ding, Liyong Du, Tingting Li, Xiaolei Wang, Junfeng Li, Chao Zhao, “Thermal atomic layer deposition of low workfunction metal TiAlC for FinFET device”, ALD 2016, Dublin, Ireland (2016).
11. Jinjuan Xiang, Yanbo Zhang, Jianfeng Gao, Tingting Li, Huaxiang Yin, Junfeng Li, Chao Zhao, “Atomic Layer Deposited TiAlC Film as Metal Gate for 22 nm Node CMOS Technology and Beyond”, ALD 2015, Portland, USA (2015)
12. Jinjuan Xiang, Yuqiang Ding, Chongying Xu, Liyong Du, Xiaolei Wang,Junfeng Li, and Chao Zhao, “Investigation on atomic layer deposition of N type work-function metal for 14nm FinFETs and beyond”, IUMRS-ICA 2016, Qingdao, China. Invited Talk.
13. Jinjuan Xiang, Xiaolei Wang, Tingting Li, Chao Zhao, Wenwu Wang, and Junfeng Li, Dapeng Chen, and Tianchun Ye, “Band alignment of high-k dielectric on SiO2/Si stack”, 12th IWJT, Shanghai, China (2012).
