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LI Binhong
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Update time: 2017-07-05
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Name:LI Binhong        
Gender:Male
Title:Associate professor        
Nationality:P.R.China
Education:Ph.D.        
E-Mail:libinhong@ime.ac.cn      
Address:3 Beitucheng West Road, Chaoyang District, Beijing, PR China        
Postcode:100029
Tel:+86-10-82995750        
Fax:+86-10-82995836
Education Background:
2008.9–2011.11: Ph.D. degree with thesis title: Study of ageing effect on electromagnetic compatibility of Integrated circuit, under supervision of Prof. Sonia BEN DHIA and Alexandre BOYER, INSA Toulouse. France.
2005.9–2008.7: M.S. Major: Nano and Microelectronic, University of Grenoble, Grenoble, France.
2001.9–2005.7: B.S. Major: Microelectronic, FUDAN University, Shanghai, China.
Professional Experience:
2012.5-Present: Institute of Microelectronics, Chinese Academy of Sciences.
Research Interests:
Microelectronic reliability;
Integrated circuit and device electromagnetic compatibility;
Radiation effects of integrated circuit and advanced devices;
Publications:
1.        B. Li, A. Boyer, S. Ben Dhia, C. Lemoine, “Ageing effect on electromagnetic susceptibility of a phase locked loop”, Microelectronic Reliability, Vol. 50, Issues 9-11, September – November 2010, pp. 1304-1308.
2.        B. Li, N. Berbel, A. Boyer, S. Ben Dhia, R. Fernández Garcíab, “Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences” , Microelectronic Reliability. Vol. 51, Issues 9-11, pp. 1557-1560. September 2011.
3.        A. Boyer, S. Ben Dhia, B. Li, N. Berbel, R. Fernández Garcíab, “Experimental Investigations on electrical Stress Impact on Integrated Circuit Electromagnetic Compatibility” IEEE Transaction on Electromagnetic Compatibility,Vol. PP, No. 99,February 2013.
4.        B. Li, K. Zhao, J. Wu, X. Zhao, J. Su, J. Gao, C. Gao, J. Luo, “Electromagnetic susceptibility characterization of double SOI device”, Microelectronics Reliability, Volume 64, September 2016, Pages 168–171.
5.        J. Wu, C. Li, B. Li*, W. Zhu, H. Wang, “Microcontroller susceptibility variations to EFT burst during accelerated aging” Microelectronics Reliability, Volume 64, September 2016, Pages 210–214.
Honour:
2013, the “research new star” award of IMECAS
Patents Application:
“A new way to measure the thermal resistance”,201610632860.6, Jianhui BU, Binhong LI, Jiajun LUO, Zhengsheng HAN, 2016
Projects and Subjects Participated:
1.        National Natural Science Foundation, 2015-2017
2.        The State Key Laboratories Foundation,2016-2017.
3.        The Scientific Research Foundation of the State Human Resource Ministry and the Education Ministry for Returned Chinese Scholars, China 2015-2016。
4.        The thirteenth five-years equipment advanced research foundation, 2017-2018.

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