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WANG Shengkai
Update time: 2020-05-20
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WANG, Shengkai












High Frequency High Voltage Center


3 Beitucheng West Road, Chaoyang District, Beijing, PR China







Education Background

2008.10-2011.9 The University of Tokyo, Materials Engineering, Ph.D.

2006.9-2008.9 Harbin Institute of Technology, Materials Physics and Chemistry, M. Eng.

2002.9-2006.8 Harbin Institute of Technology, Materials Physics, B. Eng.

Professional  Experience

2020.7-Present Institute of Microelectronics, CAS, Professor, Group leader

2015.8-2020.7 Institute of Microelectronics, CAS, Associate Professor, Group leader

2015.4-2015.7 The University of Tokyo, Department of Materials Engineering, Visiting Scholar

2013.10-2015.3 Institute of Microelectronics, CAS, Associate Professor,

2011.10-2013.9 Institute of Microelectronics, CAS, Assistant Professor,

Research Interests

Surface and Interface Science in MOS Structure (SiC/Ge/III-V);

Bio- Intelligent Devices and Applications.


80+ journal and conference papers (32 First Author), H-index=15Total citation=821 (Source: Google Scholar 2020-07)

1.    S.-K. Wang*, Q. Huang, J. Zhao, Y. Zhou, X. L. Zhao, P. L. Yao, X. Y. Liu, X. L. Liang, Electro-chemiresistive Functionalization of SWCNT-TFT by PCz and Its "Electronic Hourglass" Application with Zero-static Power Consumption, ACS Applied Energy Materials, 2,11(2019) 8253.

2.    S.-K. Wang, B. Sun, M.-M. Cao, H.-D. Chang, Y.-Y. Su, H.-O. Li, and H.-G. Liu*, "Modification of Al2O3/InP interfaces using sulfur and nitrogen passivations," J. Appl. Phys., 121 (2017) 184104.

3.    S. K. Wang*, M. Cao, B. Sun, H. Li, H. G. Liu, "Reducing the interface trap density in Al2O3/InP stacks by low-temperature thermal process", Appl. Phys. Express 8, 091201 (2015).

4.    S. K. Wang, H.-G. Liu*, and A. Toriumi, "Kinetic Study of GeO Disproportionation into GeO2/Ge System Using X-ray Photoelectron Spectroscopy", Appl. Phys. Lett. 101, 5 (2012)

5.    S. K. Wang*, K. Kita, C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi, "Desorption kinetics of GeO from GeO2/Ge structure", J. Appl. Phys. 108, 054104 (2010).

6.    X. Y. Liu*, J. L. Hao, N. N. You, Y. Bai, Y. D. Tang, C. Y. Yang, S. K. Wang*, High mobility SiC MOSFET with low Dit using high pressure microwave plasma oxidation, Chin. Phys. B, 29 (2020) 037301.

7.    Y. Xu, S. K. Wang*, P. L. Yao, Y. H. Wang, D. P. Chen, An air-plasma enhanced low-temperature wafer bonding method using high-concentration water glass adhesive layer, Appl. Surf. Sci. 500 (2019) 144007.

8.    X. Y. Liu*, J. L. Hao, N. N. You, Y. Bai, S. K. Wang*, High pressure microwave plasma oxidation of 4H-SiC with low interface trap density, AIP Advances, 9 (2019) 125150.

9.    Z. Y. Peng, S. K. Wang*, Y. Bai, Y. D. Tang, X. M. Chen, C. Z. Li, K. A. Liu, X. Y. Liu*, High Temperature 1MHz Capacitance-Voltage Method for Evaluation of Border Traps in 4H-SiC MOS System, J. Appl. Phys. 123 (2018) 135302.

10.   X. Yang, S. K. Wang*, X. Zhang, B. Sun, W. Zhao, H. D. Chang, Z. H. Zeng, H. G. Liu*, Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method, Appl. Phys. Lett. 105 (2014) 092101.

11.   S. K. Wang, "Germanium and III-Vs for future logic (Invited)", Compound Semiconductor International 2017, Brussels Belgium, (March 7-8, 2017)

12.   S. K. Wang, "Rapid Growth of SiO2 on SiC with Low Dit using High Pressure Microwave Oxygen Plasma (Invited)", 13th IEEE International Conference on ASIC, Chongqing, China, (Oct 9-Nov 1, 2019)

13.   S. K. Wang"Interfaces in Ge MOSFETs (invited)", 8th National Functional Materials and Application ConferenceHarbin, China, (Aug.24-26, 2013).

14.    S. K. Wang, Q. Huang, J. Zhao, X. Zhao, Y. Zhou, X. Liu, X. Liang*, Hysteretic Single Walled Carbon Nanotube Thin Film Transistor for Ultralow Static Power Consumption Application, 50th International Conference on Solid State Devices and Materials, Tokyo, Japan, (Sep. 8-12, 2018).

15.   S. K. Wang, X. Yang, Z. J. Gong, B. Sun, W. Zhao, H. D. Chang, H. G. Liu, "Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric", International Conference on Solid State Devices and Materials 2014, Fukuoka, Japan, (Sep.25-29, 2014).


1.        2019Second Prize of Beijing Technology Invention of 2019 forKey Technologies and Applications for High Current Density SiC Power Devices

2.        2017-2020, Member of youth innovation promotion association of Chinese Academy of Sciences

3.        2018, First prize of science popularization competition of Institute of microelectronics, Chinese Academy of Sciences

4.        2017, First prize of science popularization competition of Institute of microelectronics, Chinese Academy of Sciences

5.        2011, Young Researcher Award, IEEE-IWDTF2011, Japan.


Patents Application

85 Applied (34 First Author): 37 Granted4 US Patent), 48 Pending.

Projects and Subjects Participated

1.      NSFC general fund project (61974159) "Research on gate dielectric and interface coordination regulation of SiC MOSFET based on effective ion radius theory" (2020-2023)

2.      Project of youth Promotion Association of Chinese Academy of Sciences (2017-2020)

3.      Youth fund project of National Natural Science Foundation of China (61204103) "Research on lanthanide complex high-k medium and GeO2/Ge interface regulation in Ge MOS technology" (2013-2015)

4.      A key project of talent fund of Chinese Academy of Sciences - "Research on silicon-based germanium infrared detector based on photonic crystal technology" (2013-2014)


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