2016.09-2020.01 University of Chinese Academy of Sciences, Microelectronics and Solid State Electronics, Ph.D. 2007.09-2010.07 Beijing University of Technology, Microelectronics and Solid State Electronics, M. Eng. 2003.9-2007.9 Hunan Normal University, Communication Engineering, B. Eng. |
30+ journal and conference papers, representative publications as follow: [1] Yidan Tang*, Lan Ge, Hang Gu, Yun Bai, Yafei Luo, Chengzhan Li, Xinyu Liu. Degradation in electrothermal characteristics of 4H-SiC junction barrier Schottky diodes under high temperature power cycling stress. Microelectron. Reliab. 102 113451, 2019 . [2] Yi-Dan Tang*, Xin-Yu Liu* , Zheng-Dong Zhou, Yun Bai, and Cheng-Zhan Li. Defects and electrical properties in Al-implanted 4H–SiC after activation annealing. Chin. Phys. B. Vol. 28, No. 10 106101, 2019. [3] Yidan Tang*, Shengxu Dong, Yun Bai, Chengyue Yang, Chengzhan Li, Xinyu Liu. Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes. Materials Science Forum. Vol. 963, pp 562-566. 2019. [4] Yidan Tang*, Xinyu Liu, Yun Bai, Shengxu Dong, Shaodong Xu. Study of Temperature-dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers. Materials Science Forum. Vol. 924, pp 589-592. 2018. [5] Yidan Tang*, Xinyu Liu*, Yun Bai, Chengzhan Li, Chengyue Yang. High-Temperature Reliability Analysis of 1200 V/100 A 4H-SiC Junction Barrier Schottky Diodes. Materials Science Forum, Vol. 1004, pp 1004-1009. 2020. |
[1] Yidan TANG* Huajun SHEN Yun BAI et al. “SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME”, PCT/CN2015/089335. US Patent:US 10,680,067. [2] Xinyu Liu Yidan TANG* Shengkai Wang et al.“MICROWAVE PLASMA GENERATING DEVICE FOR PLASMA OXIDATION OF SIC”, US Patent :US 10, 734, 199. [3] Xinyu Liu Yidan TANG* Shengkai Wang et al. “METHOD FOR MANUFACTURING GROOVED MOSFET DEVICE BASED ON TWO-STEP MICROWAVE PLASMA OXIDATION”, US Patent: US 10,763,105. |