Name

TANG Yidan

Gender

Female

Title

Associate Professor

Nationality

China

Education

Ph.D.

E-Mail

tangyidan@ime.ac.cn

Department

R&D Center of High Frequency & High Voltage Devices and Integrated Technology,

Address

3 Beitucheng West Road, Chaoyang District, Beijing, PR China

Postcode

100029

Tel

010-82995593

Fax

010-62021601

Education Background

2016.09-2020.01 University of Chinese Academy of Sciences, Microelectronics and Solid State Electronics, Ph.D.

2007.09-2010.07 Beijing University of Technology, Microelectronics and Solid State Electronics, M. Eng.

2003.9-2007.9 Hunan Normal University, Communication Engineering, B. Eng.

Professional Experience

2020.07-Present Institute of Microelectronics, CAS, Associate Professor

2010.10-2020.07 Institute of Microelectronics, CAS, Assistant Professor

Publications

30+ journal and conference papers, representative publications as follow:

[1]Yidan Tang*, Lan Ge, Hang Gu, Yun Bai, Yafei Luo, Chengzhan Li, Xinyu Liu. Degradation in electrothermal characteristics of 4H-SiC junction barrier Schottky diodes under high temperature power cycling stress. Microelectron. Reliab. 102 113451, 2019 .

[2]Yi-Dan Tang*, Xin-Yu Liu* , Zheng-Dong Zhou, Yun Bai, and Cheng-Zhan Li. Defects and electrical properties in Al-implanted 4H–SiC after activation annealing. Chin. Phys. B. Vol. 28, No. 10 106101, 2019.

[3]Yidan Tang*, Shengxu Dong, Yun Bai, Chengyue Yang, Chengzhan Li, Xinyu Liu. Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes. Materials Science Forum. Vol. 963, pp 562-566. 2019.

[4]Yidan Tang*, Xinyu Liu, Yun Bai, Shengxu Dong, Shaodong Xu. Study of Temperature-dependent Mechanisms and Characteristics of 4H-SiC Junction Barrier Schottky Rectifiers. Materials Science Forum. Vol. 924, pp 589-592. 2018.

[5]Yidan Tang*, Xinyu Liu*, Yun Bai, Chengzhan Li, Chengyue Yang. High-Temperature Reliability Analysis of 1200 V/100 A 4H-SiC Junction Barrier Schottky Diodes. Materials Science Forum, Vol. 1004, pp 1004-1009. 2020.

Research Interests  

Major in the wide bandgap semiconductor silicon carbide (SiC) power devices and defects in engineering.

Projects and Subjects Participated

Hosted the National Science and Technology Major Project (02)

Patents Application

[1]Yidan TANG*Huajun SHEN Yun BAI et al. “SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME”, PCT/CN2015/089335. US Patent：US 10,680,067.

[2] Xinyu LiuYidan TANG* Shengkai Wang et al.“MICROWAVE PLASMA GENERATING DEVICE FOR PLASMA OXIDATION OF SIC”, US Patent：US10, 734, 199. 

[3] Xinyu LiuYidan TANG* Shengkai Wang et al. “METHOD FOR MANUFACTURING GROOVED MOSFET DEVICE BASED ON TWO-STEP MICROWAVE PLASMA OXIDATION”, US Patent: US10,763,105.