Name

YANGHong

Gender

Female

Title

Professor

Nationality

China

Education

Ph.D

E-Mail

yanghong@ime.ac.cn

Department

Integrated Circuit Advanced Process Center (ICAC)

Address

3 Beitucheng West Road, Chaoyang District, Beijing, PR China

Postcode

100029

Tel

Fax

Education Background

1.     1998.09-2002.07 PekingUniversity, Department of computer science &technology, Microelectronics,Major: Microelectronics and Solid-state electronic, Bachelor;

2.     2002.09-2005.07 PekingUniversity, Institute of microelectronics,Master;

3.    2015.09-2019.07 University of Chinese Academy of Sciences, MicroelectronicsInstitute, Doctor.

Professional Experience

1.     2011.08- Now, Integrated Circuit Advanced Process Center (ICAC), Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Professor/Vice Professor;

2.    2005.09-2011.7 Semiconductor R&D Center, Samsung semiconductor, Samsung Electronics, Korea, Senior Engineer/Engineer

Publications

1.     Hao Chang, Qianqian Liu, Hong Yang* et.al, Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs using Gate Induced Drain Leakage, IEEE Electron Device Letters, 2023,44(3): 372-375.

2.     Longda Zhou, Qingzhu Zhang, Hong Yang* et.al, Recovery Behavior of Interface Traps after Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique,IEEE Transactions on Electrons Devices, vol. 68, No. 9, pp. 4251-4258, Sep. 2021.

3.     Longda Zhou, Zhaohao Zhang, Hong Yang* et.al,A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs, in IEEE International Reliability Physics Symposium (IRPS), Monterey, USA, Mar. 2021. (Oral)

4.     Hao Chang, Longda Zhou, HongYang*, et.al, Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs, in IEEE International Reliability Physics Symposium (IRPS), Monterey, USA, Mar. 2021.(Oral)

5.     Longda Zhou, Qingzhu Zhang, Hong Yang* et.al, Understanding Frequency Dependence of Trap Generation under AC Negative Bias Temperature Instability Stress in Si p-FinFETs, IEEE Electron Device Letters, pp.965-968, vol.41, issues7, July 2020.

6.     Hong Yang, Weichun Luo, Longda Zhou et.al, Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs, IEEE Electron Device Letters, p.1129-1132, vol.39, issue 8, Aug. 2018.

Research Interests

IC device Reliability physics and process co-design