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[2] Jingrui Guo, Ying Sun, Lingfei Wang*, Xinlv Duan, Kailiang Huang, Zhaogui Wang, Junxiao Feng, Qian Chen, Shijie Huang, Lihua Xu, Di Geng, Guangfan Jiao, Shihui Yin, Zhengbo Wang, Weiliang Jing*, Ling Li* and Ming Liu. "Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability," in 2022 Symposium on VLSI Technology, IEEE, 2022. *通讯作者
[3] Shijie Huang, Zhenhua Wu, Haoqing Xu, Jingrui Guo, Lihua Xu, Xinlv Duan, Qian Chen, Guanhua Yang, Qingzhu Zhang, Huaxiang Yin, Lingfei Wang*, Ling Li* and Ming Liu, "Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FET", in 2021 IEEE International Electron Devices Meeting (IEDM), 2021, pp. 18.5. 1-18.5. 4. *通讯作者
[4] Jingrui Guo, Kaizhen Han, Subhali Subhechha, Xinlv Duan, Qian Chen Di Geng, Shijie Huang, Lihua Xu, Junjie An, Gouri Sankar Kar, Xiao Gong, Lingfei Wang*, Ling Li*, Ming Liu, "A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application", in 2021 IEEE International Electron Devices Meeting (IEDM), 2021, pp. 8.5. 1-8.5. 4. *通讯作者
[5] Ying Zhao，Lingfei Wang*, Zhenhua Wu, Franz Schanovsky Xiaoxin Xu, Hong Yang, Hao Yu, Jinru Lai, Donyang Liu, Xichen Chuai, Yue Su, Xingsheng Wang, Ling Li* and Ming Liu*. "A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes," in 2021 Symposium on VLSI Technology, pp. 1-2. IEEE, 2021. *通讯作者
[6] Lingfei Wang*, Lin Wang, Kah-Wee Ang, Aaron Thean, and Gengchiau Liang*, “A Surface Potential- and Physics- Based Compact Model for 2D Polycrystalline-MoS2 FET with Resistive Switching Behavior in Neuromorphic Computing,” in 2018 IEEE International Electron Devices Meeting (IEDM), 2018, pp. 24.5. 1-24.5. 4. *通讯作者
[7] Lingfei Wang, Yang Li, Xiao Gong, Aaron Voon-Yew Thean, and Gengchiau Liang, “A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect,” IEEE Electron Device Letters, vol. 39, no. 5, pp. 761-764, 2018.
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[9] Lingfei Wang, Wei Wang, Guangwei Xu, Zhuoyu Ji, Nianduan Lu, Ling Li, and Ming Liu, “Analytical carrier density and quantum capacitance for graphene,” Applied Physics Letters, vol. 108, no. 1, pp. 013503, 2016.
[10] Lingfei Wang, Songang Peng, Zhiwei Zong, Ling Li, Wei Wang, Guangwei Xu, Nianduan Lu, Zhuoyu Ji, Zhi Jin, and Ming Liu, “A new surface potential based physical compact model for GFET in RF applications,” in 2015 IEEE International Electron Devices Meeting (IEDM), 2015, pp. 28.4. 1-28.4. 4. |
