Name

LUO Qing

Gender

Male

Title

Director

Nationality

Professor

Education

PHD

E-Mail

luoqing@ime.ac.cn

Department

Laboratory of Microelectronics Devices and Integrated Technology

Address

3 Beitucheng West Road, Chaoyang District, Beijing, PR China

Postcode

100029

Tel

82995940

Fax

Education Background

2014.09-2017.07: University of Chinese Academy of Sciences-PHD             

2011.09-2014.06: Tianjin University Of Technology-Master              

2007.09-2011.06: Hangzhou Dianzi University, Hangzhou -Bachelor

Publications

1.        Wang, Yuan, Lei Tao, Roger Guzman,Qing Luo*, Wu Zhou, Yang Yang, Yingfen Wei et al. "A stable rhombohedral phase in ferroelectric Hf (Zr) 1+ x O2 capacitor with ultralow coercive field." Science 381, no. 6657 (2023): 558-563.

2.        Qing Luo,Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, and Ming Liu, “A highly CMOS compatible hafnia-based ferroelectric diode” Nature Communications, 2020, 11(1).

3.        Qing Luo, Bing Chen，Rongrong Cao, Xiaoyong Xue, Keji Zhou, Jianguo Yang, Xu Zheng, Haoran Yu, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Qi Liu, Hangbing Lv, and Ming Liu, “Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications”, IEDM Tech. Dig. 38.5 (2019)

4.        Tiancheng Gong, Lei Tao, Junkang Li, Yan Cheng, Yannan Xu, Wei Wei, Pengfei Jiang, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Yang Yang, Yan Wang, Bing Chen,Qing Luo*, Steve S Chung, Shixuan Du, Ming Liu. "10⁵× endurance improvement of FE-HZO by an innovative rejuvenation method for 1z node NV-DRAM applications." Symposium on VLSI Technology (2021)

5.        Jianguo Yang,Qing Luo,Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming Liu. “A 9Mb HZO-Based Embedded FeRAM with 10¹²-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier”, ISSCC ,pp. 1-3 (2023)

6.        Qing Luo,Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Jianfeng Gao, Nianduan Lu, Steve S. Chung, Jing Li, and Ming Liu, “Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells”, IEDM Tech. Dig., 10.2: (2015).

7.        Qing Luo,Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Nianduan Lu, and Ming Liu, “Cu BEOL compatible selector with high selectivity (>10⁷), extremely low off-current (~pA) and high endurance (>10¹⁰)”, IEDM Tech. Dig., 10.4: (2015).

8.        Qing Luo,Xiaoxin Xu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Ling Li, Nianduan Lu, and Ming Liu, “Fully BEOL Compatible TaOx-based Selector with High Uniformity and Robust Performance”, IEDM Tech. Dig., 11.7: (2016)

9.        Qing Luo,Xiaoxin Xu, Tiancheng Gong, Hangbing Lv, Danian Dong, Haili Ma, Peng Yuan, Jianfeng Gao, Jing Liu, Zhaoan Yu, Junfeng Li, Shibing Long, Qi Liu, and Ming Liu, “8-layers 3D vertical RRAM with excellent scalability towards storage class memory applications”, IEDM Tech. Dig. 2.7 (2017)

10.     Qing Luo,Tiancheng Gong, Yan Cheng, Qingzhu Zhang, Haoran Yu, Jie Yu, Haili Ma, Xiaoxin Xu, Kailiang Huang, Xi Zhu, Danian Dong, Jiahao Yin, Peng Yuan, Lu Tai, Jianfeng Gao, Junfeng Li, Huaxiang Yin, Shibing Long, Qi Liu, Hangbinh Lv, and Ming Liu, “Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects”, IEDM Tech. Dig. 2.6 (2018)

Research Interests  

Emerging Memory