Z. Jin , Y. Su, W. Cheng，etc. Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar

　　transistor with fmax of 305 GHz Volume 52, ssue 11, November 2008, Pages 1825-1828

　　Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz

　　Volume 52, Issue 11, November 2008, Pages 1825-1828

　　Authors：Z. Jin , Y. Su, W. Cheng, X. Liu, A. Xu and M. Qi

　　Abstract

　　A layout of a common-base four-finger InGaAs/InP double heterostructure bipolar transistor (DHBT) has been designed and the

　　corresponding DHBT has been fabricated successfully by using planarization technology. The area of each emitter finger was 1 ×

　　15 μm2. The breakdown voltage was more than 7 V, the current could be more than 100 mA. The maximum output power can be more

　　than 80 mW derived from the DC characteristics. The maximum oscillation frequency was as high as 305 GHz at IC = 50 mA and VCB

　　= 1.5 V. The DHBT is thus promising for the medium power amplifier and voltage controlled oscillator (VCO) applications at W

　　band and higher frequencies.