Controllable and reproducible fabrication of high anisotropic organic field effect transistors 

　　Thin Solid Films Volume 516, Issue 15, 2 June 2008, Pages 5093-5097 

　　Authors：

　　Liwei Shang, Ming Liu, Deyu Tu, Lijuan Zhen, Ge Liua, Rui Jia, Liqiang Li, Wenping Hu

　　Abstract:

　　Increasing the alignment of thin films, which leads to anisotropy, is an attractive way to improve the performance of organic devices. A highly controllable and reproducible method to fabricate organic field effect transistors with large anisotropic ratios was proposed in this paper. The surface of the dielectric layer was etched to form patterns through conventional semiconductor processing. Transistors having current direction perpendicular to or parallel to the direction of the patterns were fabricated and characterized. The mobilities of these two kinds of transistors are 0.016 and 0.001 cm2/Vs respectively, which means the anisotropic ratio is 16.