Comparison of discrete-storage nonvolatile memories : advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory 

　　Journal of physics. D, Applied physics 2008, vol. 41, no3, [Note(s): 035109.1-035109.5] 

　　Authors:QIN WANG (1) ; RUI JIA (1) ; WEIHUA GUAN (1) ; WEILONG LI (1) ; QI LIU (1) ; YUAN HU (1) ; SHIBING LONG (1) ; BAOQIN CHEN (1) ; MING LIU (1) ; TIANCHUN YE (1) ; WENSHENG LU (2) ; LONG JIANG (2) 

　　Abstract:

　　In this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C-V) curves clearly indicate the charge storage in the NCs. The hybrid MOS, however, shows a larger memory window, as compared with RTA MOS. The retention characteristics of the two MOS devices are also investigated. The capacitance versus time (C-t) measurement shows that the hybrid MOS capacitor embedded with Au nanocrystals has a longer retention time. The mechanism of longer retention time for hybrid MOS capacitor is qualitatively discussed.