Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate

　　Appl. Phys. Lett. 93, 252903 (2008); DOI:10.1063/1.3050522 

　　Published 22 December 2008 

　　Qiuxia Xu, Gaobo Xu, Wenwu Wang, Dapeng Chen, Shali Shi, Zhengsheng Han, and Tianchun Ye

　　Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People`s Republic of China 

　　We have fabricated the thinnest equivalent oxide thickness of 0.62 nm HfLaON gate dielectric for TaN/HfLaON/SiOx gate stack with improved thermal stability and electrical characteristics. The HfLaON film was deposited using reactive sputtering of Hf– La and Hf targets by alternate means in N2/Ar ambience. The effects of different postdeposition annealing conditions and various La contents on the properties of HfLaON film and its interface have been investigated; the corresponding mechanisms are discussed. The gate tunneling leakage is five orders of magnitude lower than the normal polycrystalline silicon/SiO2 structure. The effective work function with TaN metal gate is 4.06 eV. ?2008 American Institute of Physics 

　　History: 

　　Received 24 September 2008; accepted 26 November 2008; published 22 December 2008 Permalink: 

　　http://link.aip.org/link/?APPLAB/93/252903/1