Home  |  Contact  |  Sitemap  |  中文  |  CAS
 
About Us
News
Research
People
International Cooperation
Education & Training
Societies & Publications
Papers
Industrial System
Sitemap
Contact Us
 
东京工业大学.jpg
 
Location: Home > Papers

Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate
Author:
ArticleSource:
Update time: 2009-09-04
Close
Text Size: A A A
Print

  Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate

  Appl. Phys. Lett. 93, 252903 (2008); DOI:10.1063/1.3050522 

  Published 22 December 2008 

  Qiuxia Xu, Gaobo Xu, Wenwu Wang, Dapeng Chen, Shali Shi, Zhengsheng Han, and Tianchun Ye

  Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People`s Republic of China 

  We have fabricated the thinnest equivalent oxide thickness of 0.62 nm HfLaON gate dielectric for TaN/HfLaON/SiOx gate stack with improved thermal stability and electrical characteristics. The HfLaON film was deposited using reactive sputtering of Hf– La and Hf targets by alternate means in N2/Ar ambience. The effects of different postdeposition annealing conditions and various La contents on the properties of HfLaON film and its interface have been investigated; the corresponding mechanisms are discussed. The gate tunneling leakage is five orders of magnitude lower than the normal polycrystalline silicon/SiO2 structure. The effective work function with TaN metal gate is 4.06 eV. ?2008 American Institute of Physics 

  History: 

  Received 24 September 2008; accepted 26 November 2008; published 22 December 2008 Permalink: 

  http://link.aip.org/link/?APPLAB/93/252903/1

COPYRIGHT (C) 2007 Microelectronice of Chinese Academy of Sciences. ALL RIGHT RESSRVED